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Results: 1-13 |
Results: 13
GERMANIUM ETCHING IN HIGH-DENSITY PLASMAS FOR 0.18 MU-M COMPLEMENTARYMETAL-OXIDE-SEMICONDUCTOR GATE PATTERNING APPLICATIONS
Authors: MONGET C SCHILTZ A JOUBERT O VALLIER L GUILLERMET M TORMEN B
Citation: C. Monget et al., GERMANIUM ETCHING IN HIGH-DENSITY PLASMAS FOR 0.18 MU-M COMPLEMENTARYMETAL-OXIDE-SEMICONDUCTOR GATE PATTERNING APPLICATIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 1833-1840
X-RAY PHOTOELECTRON-SPECTROSCOPY ANALYSES OF METAL STACKS ETCHED IN CL-2 BCL3 HIGH-DENSITY PLASMAS/
Authors: CZUPRYNSKI P JOUBERT O VALLIER L PUTTOCK M HEITZMANN M
Citation: P. Czuprynski et al., X-RAY PHOTOELECTRON-SPECTROSCOPY ANALYSES OF METAL STACKS ETCHED IN CL-2 BCL3 HIGH-DENSITY PLASMAS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 147-158
THE SPA2-RELATED PROTEIN, SPH1P, IS IMPORTANT FOR POLARIZED GROWTH INYEAST
Authors: ROEMER T VALLIER L SHEU YJ SNYDER M
Citation: T. Roemer et al., THE SPA2-RELATED PROTEIN, SPH1P, IS IMPORTANT FOR POLARIZED GROWTH INYEAST, Journal of Cell Science, 111, 1998, pp. 479-494
KINETICS AND CHARACTERIZATION OF PLASMA GROWN ALUMINUM-OXIDE
Authors: FOUR S DEVINE RAB VALLIER L
Citation: S. Four et al., KINETICS AND CHARACTERIZATION OF PLASMA GROWN ALUMINUM-OXIDE, Journal of applied physics, 83(10), 1998, pp. 5570-5572
POLYSILICON-GERMANIUM GATE PATTERNING STUDIES IN A HIGH-DENSITY PLASMA HELICON SOURCE
Authors: VALLON S MONGET C JOUBERT O VALLIER L BELL FH PONS M REGOLINI JL MORIN C SAGNES I
Citation: S. Vallon et al., POLYSILICON-GERMANIUM GATE PATTERNING STUDIES IN A HIGH-DENSITY PLASMA HELICON SOURCE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(4), 1997, pp. 1874-1880
REAL-TIME ULTRAVIOLET ELLIPSOMETRY MONITORING OF GATE PATTERNING IN AHIGH-DENSITY PLASMA
Authors: VALLON S JOUBERT O VALLIER L FERRIEU F DREVILLON B BLAYO N
Citation: S. Vallon et al., REAL-TIME ULTRAVIOLET ELLIPSOMETRY MONITORING OF GATE PATTERNING IN AHIGH-DENSITY PLASMA, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 865-870
X-RAY PHOTOELECTRON-SPECTROSCOPY ANALYSES OF OXIDE-MASKED POLYCRYSTALLINE SIGE FEATURES ETCHED IN A HIGH-DENSITY PLASMA SOURCE
Authors: MONGET C VALLON S BELL FH VALLIER L JOUBERT O
Citation: C. Monget et al., X-RAY PHOTOELECTRON-SPECTROSCOPY ANALYSES OF OXIDE-MASKED POLYCRYSTALLINE SIGE FEATURES ETCHED IN A HIGH-DENSITY PLASMA SOURCE, Journal of the Electrochemical Society, 144(7), 1997, pp. 2455-2461
POLYSILICON GATE ETCHING IN HIGH-DENSITY PLASMAS .2. X-RAY PHOTOELECTRON-SPECTROSCOPY INVESTIGATION OF SILICON TRENCHES ETCHED USING A CHLORINE-BASED CHEMISTRY
Authors: BELL FH JOUBERT O VALLIER L
Citation: Fh. Bell et al., POLYSILICON GATE ETCHING IN HIGH-DENSITY PLASMAS .2. X-RAY PHOTOELECTRON-SPECTROSCOPY INVESTIGATION OF SILICON TRENCHES ETCHED USING A CHLORINE-BASED CHEMISTRY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 1796-1806
POLYSILICON GATE ETCHING IN HIGH-DENSITY PLASMAS .1. PROCESS OPTIMIZATION USING A CHLORINE-BASED CHEMISTRY
Authors: BELL FH JOUBERT O VALLIER L
Citation: Fh. Bell et al., POLYSILICON GATE ETCHING IN HIGH-DENSITY PLASMAS .1. PROCESS OPTIMIZATION USING A CHLORINE-BASED CHEMISTRY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 96-101
INFLUENCE OF THE NATURE OF THE MASK ON POLYSILICON GATE PATTERNING INHIGH-DENSITY PLASMAS
Authors: BELL FH JOUBERT O VALLIER L
Citation: Fh. Bell et al., INFLUENCE OF THE NATURE OF THE MASK ON POLYSILICON GATE PATTERNING INHIGH-DENSITY PLASMAS, Microelectronic engineering, 30(1-4), 1996, pp. 333-336
ELECTRICAL-PROPERTIES OF TA2O5 FILMS OBTAINED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION USING A TAF5 SOURCE
Authors: DEVINE RAB VALLIER L AUTRAN JL PAILLET P LERAY JL
Citation: Rab. Devine et al., ELECTRICAL-PROPERTIES OF TA2O5 FILMS OBTAINED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION USING A TAF5 SOURCE, Applied physics letters, 68(13), 1996, pp. 1775-1777
HARD-WIRED AND PLASTIC MECHANISMS OF POLARIZED CELL-GROWTH IN YEAST
Authors: MADDEN K ROEMER T VALLIER L FLESCHER E SNYDER M
Citation: K. Madden et al., HARD-WIRED AND PLASTIC MECHANISMS OF POLARIZED CELL-GROWTH IN YEAST, Molecular biology of the cell, 6, 1995, pp. 2144-2144
MILLITORR RANGE PECVD OF ALPHA-SIO(2) FILMS USING TEOS AND OXYGEN
Authors: TEMPLIER F VALLIER L MADAR R OBERLIN JC DEVINE RAB
Citation: F. Templier et al., MILLITORR RANGE PECVD OF ALPHA-SIO(2) FILMS USING TEOS AND OXYGEN, Thin solid films, 241(1-2), 1994, pp. 251-254
Risultati: 1-13 |