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Results: 1-12 |
Results: 12

Authors: JIMENEZ I SUTHERLAND DGJ VANBUUREN T CARLISLE JA TERMINELLO LJ HIMPSEL FJ
Citation: I. Jimenez et al., PHOTOEMISSION AND X-RAY-ABSORPTION STUDY OF BORON-CARBIDE AND ITS SURFACE THERMAL-STABILITY, Physical review. B, Condensed matter, 57(20), 1998, pp. 13167-13174

Authors: VONBEHREN J VANBUUREN T ZACHARIAS M CHIMOWITZ EH FAUCHET PM
Citation: J. Vonbehren et al., QUANTUM CONFINEMENT IN NANOSCALE SILICON - THE CORRELATION OF SIZE WITH BANDGAP AND LUMINESCENCE, Solid state communications, 105(5), 1998, pp. 317-322

Authors: VANBUUREN T DINH LN CHASE LL SIEKHAUS WJ TERMINELLO LJ
Citation: T. Vanbuuren et al., CHANGES IN THE ELECTRONIC-PROPERTIES OF SI NANOCRYSTALS AS A FUNCTIONOF PARTICLE-SIZE, Physical review letters, 80(17), 1998, pp. 3803-3806

Authors: CURIONI A ANDREONI W TREUSCH R HIMPSEL FJ HASKAL E SEIDLER P HESKE C KAKAR S VANBUUREN T TERMINELLO LJ
Citation: A. Curioni et al., ATOM-RESOLVED ELECTRONIC-SPECTRA FOR ALQ(3) FROM THEORY AND EXPERIMENT, Applied physics letters, 72(13), 1998, pp. 1575-1577

Authors: EISEBITT S PATITSAS SN LUNING J RUBENSSON JE TIEDJE T VANBUUREN T EBERHARDT W
Citation: S. Eisebitt et al., SOFT-X-RAY FLUORESCENCE OF POROUS SILICON - ELECTRONIC-STRUCTURE OF SI NANOSTRUCTURES, Europhysics letters, 37(2), 1997, pp. 133-138

Authors: EISEBITT S LUNING J RUBENSSON JE VANBUUREN T PATITSAS SN TIEDJE T BERGER M ARENSFISCHER R FROHNHOFF S EBERHARDT W
Citation: S. Eisebitt et al., SOFT-X-RAY EMISSION OF POROUS SILICON NANOSTRUCTURES, Journal of electron spectroscopy and related phenomena, 79, 1996, pp. 135-138

Authors: EISEBITT S LUNING J RUBENSSON JE VANBUUREN T PATITSAS SN TIEDJE T BERGER M ARENSFISCHER R FROHNHOFF S EBERHARDT W
Citation: S. Eisebitt et al., QUANTUM CONFINEMENT EFFECTS IN THE SOFT-X-RAY FLUORESCENCE-SPECTRA OFPOROUS SILICON NANOSTRUCTURES, Solid state communications, 97(7), 1996, pp. 549-552

Authors: WILSON AM WAY BM DAHN JR VANBUUREN T
Citation: Am. Wilson et al., NANODISPERSED SILICON IN PREGRAPHITIC CARBONS, Journal of applied physics, 77(6), 1995, pp. 2363-2369

Authors: VANBUUREN T TIEDJE T PATITSAS SN WEYDANZ W
Citation: T. Vanbuuren et al., EFFECT OF THERMAL ANNEALING ON THE CONDUCTION-BAND AND VALENCE-BAND QUANTUM SHIFTS IN POROUS SILICON, Physical review. B, Condensed matter, 50(4), 1994, pp. 2719-2722

Authors: DAHN JR WAY BM FULLER EW WEYDANZ WJ TSE JS KLUG DD VANBUUREN T TIEDJE T
Citation: Jr. Dahn et al., X-RAY-DIFFRACTION AND X-RAY-ABSORPTION STUDIES OF POROUS SILICON, SILOXENE, HEAT-TREATED SILOXENE, AND LAYERED POLYSILANE, Journal of applied physics, 75(4), 1994, pp. 1946-1951

Authors: WEYDANZ WJ WAY BM VANBUUREN T DAHN JR
Citation: Wj. Weydanz et al., BEHAVIOR OF NITROGEN-SUBSTITUTED CARBON (NZC1-Z) IN LI LI(NZCL1-Z)6 CELLS/, Journal of the Electrochemical Society, 141(4), 1994, pp. 900-906

Authors: VANBUUREN T TIEDJE T DAHN JR WAY BM
Citation: T. Vanbuuren et al., PHOTOELECTRON-SPECTROSCOPY MEASUREMENTS OF THE BAND-GAP IN POROUS SILICON, Applied physics letters, 63(21), 1993, pp. 2911-2913
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