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ON THE CORRELATION BETWEEN THE CARBON CONTENT AND THE ELECTRICAL QUALITY OF THERMALLY GROWN OXIDES ON P-TYPE 6H-SILICON CARBIDE
Authors: VATHULYA VR WANG DN WHITE MH
Citation: Vr. Vathulya et al., ON THE CORRELATION BETWEEN THE CARBON CONTENT AND THE ELECTRICAL QUALITY OF THERMALLY GROWN OXIDES ON P-TYPE 6H-SILICON CARBIDE, Applied physics letters, 73(15), 1998, pp. 2161-2163
THIN OXIDE-GROWTH ON 6H-SILICON CARBIDE
Authors: VATHULYA VR WAGNER WE MILLER FC WHITE MH
Citation: Vr. Vathulya et al., THIN OXIDE-GROWTH ON 6H-SILICON CARBIDE, Microelectronic engineering, 36(1-4), 1997, pp. 175-178
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