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Results:
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Results: 3
COUNTER DOPED N-CHANNEL MOSFETS - MOBILITY IMPROVEMENT AND REVERSE SHORT-CHANNEL EFFECT ENHANCEMENT
Authors:
VERPLOEG EP NODA H UMEDA K NAGAI R KIMURA S
Citation:
Ep. Verploeg et al., COUNTER DOPED N-CHANNEL MOSFETS - MOBILITY IMPROVEMENT AND REVERSE SHORT-CHANNEL EFFECT ENHANCEMENT, JPN J A P 1, 34(2B), 1995, pp. 878-881
MEASUREMENT OF SUBSTRATE CURRENT IN SOI MOSFETS
Authors:
NGUYEN CT VERPLOEG EP KUEHNE SC PLUMMER JD WONG SS RENTELN P
Citation:
Ct. Nguyen et al., MEASUREMENT OF SUBSTRATE CURRENT IN SOI MOSFETS, IEEE electron device letters, 15(4), 1994, pp. 132-134
PARASITIC BIPOLAR GAIN IN FULLY DEPLETED N-CHANNEL SOI MOSFETS
Authors:
VERPLOEG EP NGUYEN CT WONG SS PLUMMER JD
Citation:
Ep. Verploeg et al., PARASITIC BIPOLAR GAIN IN FULLY DEPLETED N-CHANNEL SOI MOSFETS, I.E.E.E. transactions on electron devices, 41(6), 1994, pp. 970-977
Risultati:
1-3
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