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Results:
1-7
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Results: 7
Authors:
VERSCHUREN CA
HARMSMA PJ
OEI YS
LEYS MR
VONK H
WOLTER JH
Citation: Ca. Verschuren et al., BUTT-COUPLING LOSS OF 0.1DB INTERFACE IN INP/INGAAS MULTIPLE-QUANTUM-WELL WAVE-GUIDE-WAVE-GUIDE STRUCTURES GROWN BY SELECTIVE-AREA CHEMICALBEAM EPITAXY/, Semiconductor science and technology, 13(8A), 1998, pp. 169-172
Authors:
VERSCHUREN CA
LEYS MR
MARSCHNER T
VONK H
WOLTER JH
Citation: Ca. Verschuren et al., A MODIFIED BCF MODEL TO QUANTITATIVELY DESCRIBE THE (100)INP GROWTH-RATE IN CHEMICAL BEAM EPITAXY, Journal of crystal growth, 188(1-4), 1998, pp. 11-16
Authors:
VERSCHUREN CA
HARMSMA PJ
OEI YS
LEYS MR
VONK H
WOLTER JH
Citation: Ca. Verschuren et al., BUTT-COUPLING LOSS OF 0.1 DB INTERFACE IN INP/INGAAS MQW WAVE-GUIDE-WAVE-GUIDE STRUCTURES GROWN BY SELECTIVE-AREA CHEMICAL BEAM EPITAXY/, Journal of crystal growth, 188(1-4), 1998, pp. 288-294
Authors:
MARSCHNER T
BRUBACH J
VERSCHUREN CA
LEYS MR
WOLTER JH
Citation: T. Marschner et al., X-RAY INTERFERENCE EFFECT AS A TOOL FOR THE STRUCTURAL INVESTIGATION OF GAINAS INP MULTIPLE-QUANTUM WELLS/, Journal of applied physics, 83(7), 1998, pp. 3630-3637
Authors:
MARSCHNER T
TICHELAAR FD
LEYS MR
RONGEN RTH
VERSCHUREN CA
VONK H
WOLTER JH
Citation: T. Marschner et al., EPITAXIAL LAYER MORPHOLOGY OF HIGHLY STRAINED GAINAS INP MULTIPLE-QUANTUM-WELL STRUCTURES GROWN BY CBE/, Microelectronics, 28(8-10), 1997, pp. 849-855
Authors:
VERSCHUREN CA
LEYS MR
OEI YS
VREEBURG CGM
VONK H
RONGEN RTH
WOLTER JH
Citation: Ca. Verschuren et al., SURFACE-MORPHOLOGY OF INP INGAAS IN SELECTIVE-AREA GROWTH BY CHEMICALBEAM EPITAXY/, Journal of crystal growth, 170(1-4), 1997, pp. 650-654
Authors:
VERSCHUREN CA
BESTWICK TD
DAWSON MD
KEAN AH
DUGGAN G
Citation: Ca. Verschuren et al., OBSERVATION OF BOTH HEAVY-HOLE AND LIGHT-HOLE EXCITONS IN (25-60)-NM DIAMETER GAAS-(AL,GA)AS QUANTUM DOTS, Physical review. B, Condensed matter, 52(12), 1995, pp. 8640-8642
Risultati:
1-7
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