ACNP - Italian Periodicals Catalogue

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Results: 1-11 |

Results: 11

DOPANT INCORPORATION BEHAVIOR DURING MOMBE GROWTH OF INP ON (1 0 0), (1 1 1) AND NONPLANAR SURFACES

Authors: MARHEINEKE B VEUHOFF E HEINECKE H

Citation: B. Marheineke et al., DOPANT INCORPORATION BEHAVIOR DURING MOMBE GROWTH OF INP ON (1 0 0), (1 1 1) AND NONPLANAR SURFACES, Journal of crystal growth, 188(1-4), 1998, pp. 183-190

POTENTIAL OF MOMBE CBE FOR THE PRODUCTION OF PHOTONIC DEVICES IN COMPARISON WITH MOVPE/

Authors: VEUHOFF E

Citation: E. Veuhoff, POTENTIAL OF MOMBE CBE FOR THE PRODUCTION OF PHOTONIC DEVICES IN COMPARISON WITH MOVPE/, Journal of crystal growth, 188(1-4), 1998, pp. 231-246

ELEMENT INCORPORATION IN GAINASP FOR UNIFORM LARGE-AREA MOMBE

Authors: POPP M BAUMEISTER H VEUHOFF E HEINECKE H

Citation: M. Popp et al., ELEMENT INCORPORATION IN GAINASP FOR UNIFORM LARGE-AREA MOMBE, Journal of crystal growth, 188(1-4), 1998, pp. 247-254

GRINSCH GAINASP MQW LASER STRUCTURES GROWN BY MOMBE

Authors: BAUMEISTER H VEUHOFF E POPP M HEINECKE H

Citation: H. Baumeister et al., GRINSCH GAINASP MQW LASER STRUCTURES GROWN BY MOMBE, Journal of crystal growth, 188(1-4), 1998, pp. 266-274

FULL GASEOUS SOURCE GROWTH OF SEPARATE-CONFINEMENT MQW 1.55 MU-M LASER STRUCTURES IN A PRODUCTION MOMBE

Authors: POPP M HEINECKE H BAUMEISTER H VEUHOFF E

Citation: M. Popp et al., FULL GASEOUS SOURCE GROWTH OF SEPARATE-CONFINEMENT MQW 1.55 MU-M LASER STRUCTURES IN A PRODUCTION MOMBE, Journal of crystal growth, 175, 1997, pp. 1247-1253

GROWTH OF 1.55-MU-M DH LASERSTRUCTURES USING TBAS AND TBP IN MOMBE

Authors: KEIDLER M POPP M RITTER D MARHEINEKE B HEINECKE H BAUMEISTER H VEUHOFF E

Citation: M. Keidler et al., GROWTH OF 1.55-MU-M DH LASERSTRUCTURES USING TBAS AND TBP IN MOMBE, Journal of crystal growth, 170(1-4), 1997, pp. 161-166

ZN DOPING OF INP GAINASP DEVICE STRUCTURES IN METALORGANIC MOLECULAR-BEAM EPITAXY USING DIETHYLZINC/

Authors: VEUHOFF E BAUMEISTER H TREICHLER R POPP M HEINECKE H

Citation: E. Veuhoff et al., ZN DOPING OF INP GAINASP DEVICE STRUCTURES IN METALORGANIC MOLECULAR-BEAM EPITAXY USING DIETHYLZINC/, Journal of crystal growth, 164(1-4), 1996, pp. 402-408

EVALUATION OF III-V GROWTH-H TECHNOLOGIES FOR OPTOELECTRONIC APPLICATIONS

Authors: HEINECKE H VEUHOFF E

Citation: H. Heinecke et E. Veuhoff, EVALUATION OF III-V GROWTH-H TECHNOLOGIES FOR OPTOELECTRONIC APPLICATIONS, Materials science & engineering. B, Solid-state materials for advanced technology, 21(2-3), 1993, pp. 120-129

HIGH-TEMPERATURE (130-DEGREES-C) CW OPERATION OF 1.53-MU-M INGAASP RIDGE-WAVE-GUIDE LASERS USING STRAINED QUATERNARY QUANTUM-WELLS

Authors: STEGMULLER B VEUHOFF E RIEGER J HEDRICH H

Citation: B. Stegmuller et al., HIGH-TEMPERATURE (130-DEGREES-C) CW OPERATION OF 1.53-MU-M INGAASP RIDGE-WAVE-GUIDE LASERS USING STRAINED QUATERNARY QUANTUM-WELLS, Electronics Letters, 29(19), 1993, pp. 1691-1693

ELECTROABSORPTION IN INGAASP - ELECTROOPTICAL MODULATORS AND BISTABLEOPTICAL SWITCHES (VOL 62, PG 2072, 1993)

Authors: KNUPFER B KIESEL P HOFLER A RIEL P DOHLER GH VEUHOFF E

Citation: B. Knupfer et al., ELECTROABSORPTION IN INGAASP - ELECTROOPTICAL MODULATORS AND BISTABLEOPTICAL SWITCHES (VOL 62, PG 2072, 1993), Applied physics letters, 63(9), 1993, pp. 1293-1293

ELECTROABSORPTION IN INGAASP - ELECTROOPTICAL MODULATORS AND BISTABLEOPTICAL SWITCHES

Authors: KNUPFER B KIESEL P HOFLER A RIEL P DOHLER GH VEUHOFF E

Citation: B. Knupfer et al., ELECTROABSORPTION IN INGAASP - ELECTROOPTICAL MODULATORS AND BISTABLEOPTICAL SWITCHES, Applied physics letters, 62(17), 1993, pp. 2072-2074

Risultati: 1-11 |