FULL GASEOUS SOURCE GROWTH OF SEPARATE-CONFINEMENT MQW 1.55 MU-M LASER STRUCTURES IN A PRODUCTION MOMBE

The feasibility of metalorganic molecular beam epitaxy (MOMBE or CBE) as a production process is studied with respect to flexibility, unifor mity, long term stability and device quality. Gaseous doping sources w ere used for growth of GaInAsP/InP device structures: For n and p type doping disilane and diethylzinc (DEZn), respectively, were injected. The importance of precracking for efficient dopant incorporation is de scribed. For uniform growth across larger areas the dependence of laye r composition on growth temperature is critical. Therefore this effect along with the effect of V/III ratio have been studied in detail, and the optimum growth conditions are discussed. It is demonstrated that composition uniformity and long term stability can be obtained leading to variations of emission wavelength and lattice mismatch below +/- 1 .5 nm and +/- 1.5 x 10(-4), respectively. These material properties ar e found across an area of about 90% of a 2 in wafer revealing the high yield of this process. As a device test vehicle, strained layer MQW l aser structures were grown, and data on broad area threshold current d ensities are compared with state of the art results from structures gr own by metalorganic vapour phase epitaxy (MOVPE).