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FACTORS RESPONSIBLE FOR THE DIFFERENCE IN THE DOSE DEPENDENCES OF THEINTENSITIES OF DIFFERENT LUMINESCENCE BANDS OF III-V SEMICONDUCTOR COMPOUNDS BOMBARDED WITH FAST PARTICLES
Authors: VINNIK EV GLINCHUK KD GUROSHEV VI PROKHOROVICH AV
Citation: Ev. Vinnik et al., FACTORS RESPONSIBLE FOR THE DIFFERENCE IN THE DOSE DEPENDENCES OF THEINTENSITIES OF DIFFERENT LUMINESCENCE BANDS OF III-V SEMICONDUCTOR COMPOUNDS BOMBARDED WITH FAST PARTICLES, Semiconductors, 27(6), 1993, pp. 560-562
MECHANISM FOR RADIATION-STIMULATED CHANGES OF THE POSITION OF THE MAXIMUM OF AN IMPURITY LUMINESCENCE BAND OF GALLIUM-ARSENIDE AND INDIUM-PHOSPHIDE
Authors: VINNIK EV GLINCHUK KD GUROSHEV VI PROKHOROVICH AV
Citation: Ev. Vinnik et al., MECHANISM FOR RADIATION-STIMULATED CHANGES OF THE POSITION OF THE MAXIMUM OF AN IMPURITY LUMINESCENCE BAND OF GALLIUM-ARSENIDE AND INDIUM-PHOSPHIDE, Semiconductors, 27(5), 1993, pp. 463-465
LUMINESCENCE-CENTERS INDUCED IN P-TYPE GAASZN BY RADIATION AND HEAT-TREATMENT
Authors: VINNIK EV GLINCHUK KD GUROSHEV VI PROKHOROVICH AV
Citation: Ev. Vinnik et al., LUMINESCENCE-CENTERS INDUCED IN P-TYPE GAASZN BY RADIATION AND HEAT-TREATMENT, Semiconductors, 27(4), 1993, pp. 338-340
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