Authors: VOINIGESCU SP MALIEPAARD MC SHOWELL JL BABCOCK GE MARCHESAN D SCHROTER M SCHVAN P HARAME DL

Citation: Sp. Voinigescu et al., A SCALABLE HIGH-FREQUENCY NOISE MODEL FOR BIPOLAR-TRANSISTORS WITH APPLICATION TO OPTIMAL TRANSISTOR SIZING FOR LOW-NOISE AMPLIFIER DESIGN, IEEE journal of solid-state circuits, 32(9), 1997, pp. 1430-1439

Authors: VOINIGESCU SP RABKIN PB SALAMA CAT BLAKEY PA

Citation: Sp. Voinigescu et al., 2D NUMERICAL INVESTIGATION OF THE IMPACT OF COMPOSITIONAL GRADING ON THE PERFORMANCE OF SUBMICROMETER SI-SIGE MOSFETS, I.E.E.E. transactions on electron devices, 42(6), 1995, pp. 1039-1046

Authors: VOINIGESCU SP INIEWSKI K LISAK R SALAMA CAT NOEL JP HOUGHTON DC

Citation: Sp. Voinigescu et al., NEW TECHNIQUE FOR THE CHARACTERIZATION OF SI SIGE LAYERS USING HETEROSTRUCTURE MOS CAPACITORS, Solid-state electronics, 37(8), 1994, pp. 1491-1501