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Results: 1-11 |
Results: 11
ELECTRICAL-PROPERTIES OF GASB-BASED SOLID-SOLUTIONS (GAINASSB, GAALSB, GAALASSB) AND THEIR COMPOSITIONAL DEPENDENCE
Authors: VORONINA TI DZHURTANOV BE LAGUNOVA TS SIPOVSKAYA MA SHERSTNEV VV YAKOVLEV YP
Citation: Ti. Voronina et al., ELECTRICAL-PROPERTIES OF GASB-BASED SOLID-SOLUTIONS (GAINASSB, GAALSB, GAALASSB) AND THEIR COMPOSITIONAL DEPENDENCE, Semiconductors, 32(3), 1998, pp. 250-256
DEPLETION OF THE INVERSE ELECTRON CHANNEL AT THE TYPE-II HETEROJUNCTION IN THE SYSTEM P-GAINASSB P-INAS/
Authors: VORONINA TI LAGUNOVA TS MIKHAILOVA MP MOISEEV KD ROSOV AE YAKOVLEV YP
Citation: Ti. Voronina et al., DEPLETION OF THE INVERSE ELECTRON CHANNEL AT THE TYPE-II HETEROJUNCTION IN THE SYSTEM P-GAINASSB P-INAS/, Semiconductors, 32(2), 1998, pp. 195-200
ELECTRON CHANNEL WITH HIGH CARRIER MOBILITY AT THE INTERFACE OF TYPE-II BROKEN-GAP P-GAINASSB P-INAS SINGLE HETEROJUNCTIONS/
Authors: MIKHAILOVA MP VORONINA TI LAGUNOVA TS MOISEEV KD OBUKHOV SA ROZOV AE YAKOVLEV YP
Citation: Mp. Mikhailova et al., ELECTRON CHANNEL WITH HIGH CARRIER MOBILITY AT THE INTERFACE OF TYPE-II BROKEN-GAP P-GAINASSB P-INAS SINGLE HETEROJUNCTIONS/, Superlattices and microstructures, 24(1), 1998, pp. 105-110
PROPERTIES OF THE ELECTRON CHANNEL IN SINGLE GAINASSB P-INAS HETEROSTRUCTURES/
Authors: VORONINA TI LAGUNOV TS MIKHAILOVA MP MOISEEV KD OBUKHOV SA ROZOV AE YAKOVLEV YP
Citation: Ti. Voronina et al., PROPERTIES OF THE ELECTRON CHANNEL IN SINGLE GAINASSB P-INAS HETEROSTRUCTURES/, Technical physics letters, 23(2), 1997, pp. 128-129
ELECTRONIC TRANSPORT IN A TYPE-II GAINASSB P-INAS HETEROJUNCTION WITHDIFFERENT DOPING LEVELS OF THE SOLID-SOLUTION/
Authors: VORONINA TI LAGUNOVA TS MIKHAILOVA MP MOISEEV KD SIPOVSKAYA MA YAKOVLEV YP
Citation: Ti. Voronina et al., ELECTRONIC TRANSPORT IN A TYPE-II GAINASSB P-INAS HETEROJUNCTION WITHDIFFERENT DOPING LEVELS OF THE SOLID-SOLUTION/, Semiconductors, 31(8), 1997, pp. 763-767
HIGH CARRIER MOBILITY IN P-TYPE GAINASSB P-INAS HETEROSTRUCTURES/
Authors: VORONINA TI LAGUNOVA TS MIKHAILOVA MP MOISEEV KD YAKOVLEV YP
Citation: Ti. Voronina et al., HIGH CARRIER MOBILITY IN P-TYPE GAINASSB P-INAS HETEROSTRUCTURES/, Semiconductors, 30(6), 1996, pp. 523-526
MAGNETORESISTANCE IN GAINSBAS P-INAS HETE ROSTRUCTURES WITH DIFFERENTLEVEL OF SOLID-SOLUTION ALLOYING BY DONOR ADMIXTURE/
Authors: VORONINA TI LAGUNOVA TS MIKHAILOVA MP MOISEEV KD ROZOV AE YAKOVLEV YP
Citation: Ti. Voronina et al., MAGNETORESISTANCE IN GAINSBAS P-INAS HETE ROSTRUCTURES WITH DIFFERENTLEVEL OF SOLID-SOLUTION ALLOYING BY DONOR ADMIXTURE/, Pis'ma v Zurnal tehniceskoj fiziki, 22(19), 1996, pp. 34-40
GAINASSB INAS HETEROJUNCTIONS
Authors: MIKHAILOVA MP ANDREEV IA VORONINA TI LAGUNOVA TS MOISEEV KD YAKOVLEV YP
Citation: Mp. Mikhailova et al., GAINASSB INAS HETEROJUNCTIONS, Semiconductors, 29(4), 1995, pp. 353-356
ELECTRICAL-PROPERTIES OF GAALSB AND GAALSBAS SOLID-SOLUTIONS
Authors: VORONINA TI DJURTANOV BE LAGUNOVA TS YAKOVLEV YP
Citation: Ti. Voronina et al., ELECTRICAL-PROPERTIES OF GAALSB AND GAALSBAS SOLID-SOLUTIONS, Semiconductors, 28(11), 1994, pp. 1103-1105
PROPERTIES OF EPITAXIAL INDIUM ARSENIDE DOPED WITH RARE-EARTH ELEMENTS
Authors: BARANOV AN VORONINA TI LAGUNOVA TS SIPOVSKAYA MA SHERSTNEV VV YAKOVLEV YP
Citation: An. Baranov et al., PROPERTIES OF EPITAXIAL INDIUM ARSENIDE DOPED WITH RARE-EARTH ELEMENTS, Semiconductors, 27(3), 1993, pp. 236-240
INVESTIGATION OF THE STRUCTURE OF THE CONDUCTION-BAND OF INASSBP SOLID-SOLUTIONS
Authors: VORONINA TI LAGUNOVA TS MOISEEV KD SIPOVSKAYA MA TIMCHENKO IN YAKOVLEV YP
Citation: Ti. Voronina et al., INVESTIGATION OF THE STRUCTURE OF THE CONDUCTION-BAND OF INASSBP SOLID-SOLUTIONS, Semiconductors, 27(11-12), 1993, pp. 978-984
Risultati: 1-11 |