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SON KA
MAO AY
KIM BY
LIU F
PYLANT ED
HESS DA
WHITE JM
KWONG DL
ROBERTS DA
VRTIS RN
Citation: Ka. Son et al., ULTRATHIN TA2O5 FILM GROWTH BY CHEMICAL-VAPOR-DEPOSITION OF TA(N(CH3)(2))(5) AND O-2 ON BARE AND SIOXNY-PASSIVATED SI(100) FOR GATE DIELECTRIC APPLICATIONS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1670-1675
Authors:
SON KA
MAO AY
SUN YM
KIM BY
LIU F
KAMATH A
WHITE JM
KWONG DL
ROBERTS DA
VRTIS RN
Citation: Ka. Son et al., CHEMICAL-VAPOR-DEPOSITION OF ULTRATHIN TA2O5 FILMS USING TA[N(CH3)(2)](5), Applied physics letters, 72(10), 1998, pp. 1187-1189
Authors:
LAXMAN RK
HOCHBERG AK
ROBERTS DA
VRTIS RN
OVALLE S
Citation: Rk. Laxman et al., PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF FLUORINATED SILICON DIOXIDE FILMS USING NOVEL ALKYLSILANES, Advanced materials for optics and electronics, 6(2), 1996, pp. 93-99
Authors:
INO K
NATORI I
ICHIKAWA A
VRTIS RN
OHMI T
Citation: K. Ino et al., PLASMA-ENHANCED IN-SITU CHAMBER CLEANING EVALUATED BY EXTRACTED-PLASMA-PARAMETER ANALYSIS, IEEE transactions on semiconductor manufacturing, 9(2), 1996, pp. 230-240