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Citation: Ka. Son et al., ULTRATHIN TA2O5 FILM GROWTH BY CHEMICAL-VAPOR-DEPOSITION OF TA(N(CH3)(2))(5) AND O-2 ON BARE AND SIOXNY-PASSIVATED SI(100) FOR GATE DIELECTRIC APPLICATIONS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1670-1675

Authors: SON KA MAO AY SUN YM KIM BY LIU F KAMATH A WHITE JM KWONG DL ROBERTS DA VRTIS RN

Citation: Ka. Son et al., CHEMICAL-VAPOR-DEPOSITION OF ULTRATHIN TA2O5 FILMS USING TA[N(CH3)(2)](5), Applied physics letters, 72(10), 1998, pp. 1187-1189

Authors: LAXMAN RK HOCHBERG AK ROBERTS DA VRTIS RN OVALLE S

Citation: Rk. Laxman et al., PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF FLUORINATED SILICON DIOXIDE FILMS USING NOVEL ALKYLSILANES, Advanced materials for optics and electronics, 6(2), 1996, pp. 93-99

Authors: INO K NATORI I ICHIKAWA A VRTIS RN OHMI T

Citation: K. Ino et al., PLASMA-ENHANCED IN-SITU CHAMBER CLEANING EVALUATED BY EXTRACTED-PLASMA-PARAMETER ANALYSIS, IEEE transactions on semiconductor manufacturing, 9(2), 1996, pp. 230-240

Authors: MAENO M HIRAYAMA R IZUMI H TAKAHASHI R CHIBA K VRTIS RN OHMI T

Citation: M. Maeno et al., FLUORINE-PASSIVATED ELECTROLESS NI-P FILMS, Journal of the Electrochemical Society, 141(10), 1994, pp. 2649-2654