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Results:
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Results: 10
Authors:
ISTRATOV AA
VYVENKO OF
HIESLMAIR H
WEBER ER
Citation: Aa. Istratov et al., CRITICAL ANALYSIS OF WEIGHTING FUNCTIONS FOR THE DEEP-LEVEL TRANSIENTSPECTROSCOPY OF SEMICONDUCTORS, Measurement science & technology, 9(3), 1998, pp. 477-484
Authors:
ISTRATOV AA
HEDEMANN H
SEIBT M
VYVENKO OF
SCHROTER W
HEISER T
FLINK C
HIESLMAIR H
WEBER ER
Citation: Aa. Istratov et al., ELECTRICAL AND RECOMBINATION PROPERTIES OF COPPER-SILICIDE PRECIPITATES IN SILICON, Journal of the Electrochemical Society, 145(11), 1998, pp. 3889-3898
Authors:
ISTRATOV AA
VYVENKO OF
Citation: Aa. Istratov et Of. Vyvenko, DX-LIKE CENTER GENERATED BY UNIAXIAL STRAINS OF SCREW DISLOCATIONS INCDS, Journal of applied physics, 80(8), 1996, pp. 4400-4410
Authors:
ISTRATOV AA
VYVENKO OF
Citation: Aa. Istratov et Of. Vyvenko, DEEP CENTERS IN CADMIUM-SULFIDE SINGLE-CRYSTALS - NEW METHOD FOR COMPARING DLTS DATA FOUND BY DIFFERENT INVESTIGATORS, Semiconductors, 29(4), 1995, pp. 340-345
Authors:
VYVENKO OF
ISTRATOV AA
Citation: Of. Vyvenko et Aa. Istratov, STUDY OF POLAR DISLOCATIONS IN CADMIUM-SU LFIDE BY CATHODE LUMINESCENCE AND DLTS METHODS, Fizika tverdogo tela, 37(2), 1995, pp. 516-524
Authors:
VYVENKO OF
DAVYDOV IA
ODRINSKII AP
TEPLITSKII VA
Citation: Of. Vyvenko et al., PHOTOELECTRIC DEEP-LEVEL RELAXATION SPECTROSCOPY IN CDS SINGLE-CRYSTALS WITH DEVIATIONS FROM STOICHIOMETRY IMPOSED DURING THE GROWTH-PROCESS, Semiconductors, 28(5), 1994, pp. 425-429
Authors:
VYVENKO OF
ISTRATOV AA
Citation: Of. Vyvenko et Aa. Istratov, DISCOVERY OF A CENTER WITH STRONG LATTICE-RELAXATION IN PLASTICALLY DEFORMED CADMIUM-SULFIDE, Semiconductors, 28(12), 1994, pp. 1162-1163
Authors:
VYVENKO OF
ISTRATOV AA
Citation: Of. Vyvenko et Aa. Istratov, CORRELATED MODIFICATION OF DLTS SPECTRA A ND CADMIUM-SULFIDE DISLOCATION-STRUCTURE AFTER LOW-TEMPERATURE ANNEALING, Fizika tverdogo tela, 36(11), 1994, pp. 3375-3380
Authors:
VLASOV MY
KAMINSKAYA TN
MOSHKIN SV
FRANKKAMENETSKAYA OV
VYVENKO OF
KRETSER YL
Citation: My. Vlasov et al., EFFECT OF THE OXYGEN-PRESSURE DURING ANNEALING ON T-C AND LATTICE-PARAMETER-C OF BI-2212 SINGLE-CRYSTALS, Crystal research and technology, 29(1), 1994, pp. 113-117
Authors:
VYVENKO OF
ISTRATOV AA
Citation: Of. Vyvenko et Aa. Istratov, A NEW METHOD TO INVESTIGATE SEPARATELY THE PROPERTIES OF SCREW AND EDGE DISLOCATIONS IN II-VI COMPOUND SEMICONDUCTORS - DLTS AND CL MEASUREMENTS OF INDENTED CDS, Physica status solidi. a, Applied research, 138(2), 1993, pp. 715-721
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