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Results:
1-8
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Results: 8
Authors:
Lahreche, H
Vaille, M
Vennegues, P
Laugt, M
Beaumont, B
Gibart, P
Citation: H. Lahreche et al., Microstructural analysis of III-V nitrides grown on 6H-SiC by metal-organic vapour phase epitaxy (MOVPE), DIAM RELAT, 9(3-6), 2000, pp. 452-455
Authors:
Vennegues, P
Beaumont, B
Bousquet, V
Vaille, M
Gibart, P
Citation: P. Vennegues et al., Reduction mechanisms for defect densities in GaN using one- or two-step epitaxial lateral overgrowth methods, J APPL PHYS, 87(9), 2000, pp. 4175-4181
Authors:
Lahreche, H
Leroux, M
Laugt, M
Vaille, M
Beaumont, B
Gibart, P
Citation: H. Lahreche et al., Buffer free direct growth of GaN on 6H-SiC by metalorganic vapor phase epitaxy, J APPL PHYS, 87(1), 2000, pp. 577-583
Authors:
Nataf, G
Beaumont, B
Bouille, A
Vennegues, P
Haffouz, S
Vaille, M
Gibart, P
Citation: G. Nataf et al., High quality ELO-GaN layers on GaN/Al2O3 patterned substrates by halide vapour phase epitaxy, MAT SCI E B, 59(1-3), 1999, pp. 112-116
Authors:
Bousquet, V
Vennegues, P
Beaumont, B
Vaille, M
Gibart, P
Citation: V. Bousquet et al., TEM study of the behavior of dislocations during ELO of GaN, PHYS ST S-B, 216(1), 1999, pp. 691-695
Authors:
Lahreche, H
Vennegues, P
Vaille, M
Beaumont, B
Laugt, M
Lorenzini, P
Gibart, P
Citation: H. Lahreche et al., Comparative study of GaN layers grown on insulating AlN and conductive AlGaN buffer layers, SEMIC SCI T, 14(11), 1999, pp. L33-L36
Authors:
Lahreche, H
Vaille, M
Beaumont, B
Laugt, M
Vennegues, P
Gibart, P
Citation: H. Lahreche et al., Metal organic vapour phase epitaxy (MOVPE) growth of GaN(n)/SiC(p) heterostructures, PHYS ST S-A, 176(1), 1999, pp. 109-112
Authors:
Beaumont, B
Bousquet, V
Vennegues, P
Vaille, M
Bouille, A
Gibart, P
Dassonneville, S
Amokrane, A
Sieber, B
Citation: B. Beaumont et al., A two-step method for epitaxial lateral overgrowth of GaN, PHYS ST S-A, 176(1), 1999, pp. 567-571
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