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Results: 1-13 |
Results: 13

Authors: Valcheva, E Valchev, I Yotova, L
Citation: E. Valcheva et al., Kinetics of enzyme action of cartazyme NS-10 prior to bleaching of kraft pulp, BIOCH ENG J, 7(3), 2001, pp. 223-226

Authors: Valcheva, E Paskova, T Abrashev, MV Persson, PAO Paskov, PP Goldys, EM Beccard, R Heuken, M Monemar, B
Citation: E. Valcheva et al., Impact of MOCVD-GaN 'templates' on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN, MAT SCI E B, 82(1-3), 2001, pp. 35-38

Authors: Veleva, S Valcheva, E Valchev, I Radeva, G
Citation: S. Veleva et al., Application of an exponential kinetic equation to the interaction of optical brighteners with pulp, REACT KIN C, 72(2), 2001, pp. 355-364

Authors: Paskova, T Valcheva, E Birch, J Tungasmita, S Persson, POA Paskov, PP Evtimova, S Abrashev, M Monemar, B
Citation: T. Paskova et al., Defect and stress relaxation in HVPE-GaN films using high temperature reactively sputtered AlN buffer, J CRYST GR, 230(3-4), 2001, pp. 381-386

Authors: Valcheva, E Paskova, T Abrashev, MV Paskov, PP Persson, POA Goldys, EM Beccard, R Heuken, M Monemar, B
Citation: E. Valcheva et al., Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates, J APPL PHYS, 90(12), 2001, pp. 6011-6016

Authors: Paskova, T Tungasmita, S Valcheva, E Svedberg, EB Arnaudov, B Evtimova, S Persson, PA Henry, A Beccard, R Heuken, M Monemar, B
Citation: T. Paskova et al., Hydride vapour phase homoepitaxial growth of GaN on MOCVD-grown 'templates', MRS I J N S, 5, 2000, pp. NIL_117-NIL_123

Authors: Valcheva, E Veleva, S Valchev, I Dimitrov, I
Citation: E. Valcheva et al., Kinetic model of xylanase action on kraft pulp, REACT KIN C, 71(2), 2000, pp. 231-238

Authors: Ratnikov, V Kyutt, R Shubina, T Paskova, T Valcheva, E Monemar, B
Citation: V. Ratnikov et al., Bragg and Laue x-ray diffraction study of dislocations in thick hydride vapor phase epitaxy GaN films, J APPL PHYS, 88(11), 2000, pp. 6252-6259

Authors: Paskova, T Valcheva, E Birch, J Tungasmita, S Persson, POA Beccard, R Heuken, M Monemar, B
Citation: T. Paskova et al., Effect of Si doping of metalorganic chemical vapor deposition-GaN templates on the defect arrangement in hydride vapor phase epitaxy-GaN overgrown layers, J APPL PHYS, 88(10), 2000, pp. 5729-5732

Authors: Valcheva, E Paskova, T Tungasmita, S Persson, POA Birch, J Svedberg, EB Hultman, L Monemar, B
Citation: E. Valcheva et al., Interface structure of hydride vapor phase epitaxial GaN grown with high-temperature reactively sputtered AlN buffer, APPL PHYS L, 76(14), 2000, pp. 1860-1862

Authors: Valcheva, E Paskova, T Ivanov, IG Yakimova, R Wahab, Q Savage, S Nordell, N Harris, CI
Citation: E. Valcheva et al., B implantation in 6H-SiC: Lattice damage recovery and implant activation upon high-temperature annealing, J VAC SCI B, 17(3), 1999, pp. 1040-1044

Authors: Dimitrova, V Manova, D Valcheva, E
Citation: V. Dimitrova et al., Optical and dielectric properties of dc magnetron sputtered AlN thin filmscorrelated with deposition conditions, MAT SCI E B, 68(1), 1999, pp. 1-4

Authors: Valchev, I Valcheva, E Christova, E
Citation: I. Valchev et al., Kinetics of oxygen delignification of hardwood kraft pulp, CELL CHEM T, 33(3-4), 1999, pp. 303-310
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