Authors:
Valcheva, E
Paskova, T
Abrashev, MV
Persson, PAO
Paskov, PP
Goldys, EM
Beccard, R
Heuken, M
Monemar, B
Citation: E. Valcheva et al., Impact of MOCVD-GaN 'templates' on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN, MAT SCI E B, 82(1-3), 2001, pp. 35-38
Authors:
Veleva, S
Valcheva, E
Valchev, I
Radeva, G
Citation: S. Veleva et al., Application of an exponential kinetic equation to the interaction of optical brighteners with pulp, REACT KIN C, 72(2), 2001, pp. 355-364
Authors:
Paskova, T
Valcheva, E
Birch, J
Tungasmita, S
Persson, POA
Paskov, PP
Evtimova, S
Abrashev, M
Monemar, B
Citation: T. Paskova et al., Defect and stress relaxation in HVPE-GaN films using high temperature reactively sputtered AlN buffer, J CRYST GR, 230(3-4), 2001, pp. 381-386
Authors:
Valcheva, E
Paskova, T
Abrashev, MV
Paskov, PP
Persson, POA
Goldys, EM
Beccard, R
Heuken, M
Monemar, B
Citation: E. Valcheva et al., Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates, J APPL PHYS, 90(12), 2001, pp. 6011-6016
Authors:
Ratnikov, V
Kyutt, R
Shubina, T
Paskova, T
Valcheva, E
Monemar, B
Citation: V. Ratnikov et al., Bragg and Laue x-ray diffraction study of dislocations in thick hydride vapor phase epitaxy GaN films, J APPL PHYS, 88(11), 2000, pp. 6252-6259
Authors:
Paskova, T
Valcheva, E
Birch, J
Tungasmita, S
Persson, POA
Beccard, R
Heuken, M
Monemar, B
Citation: T. Paskova et al., Effect of Si doping of metalorganic chemical vapor deposition-GaN templates on the defect arrangement in hydride vapor phase epitaxy-GaN overgrown layers, J APPL PHYS, 88(10), 2000, pp. 5729-5732
Authors:
Valcheva, E
Paskova, T
Tungasmita, S
Persson, POA
Birch, J
Svedberg, EB
Hultman, L
Monemar, B
Citation: E. Valcheva et al., Interface structure of hydride vapor phase epitaxial GaN grown with high-temperature reactively sputtered AlN buffer, APPL PHYS L, 76(14), 2000, pp. 1860-1862
Authors:
Valcheva, E
Paskova, T
Ivanov, IG
Yakimova, R
Wahab, Q
Savage, S
Nordell, N
Harris, CI
Citation: E. Valcheva et al., B implantation in 6H-SiC: Lattice damage recovery and implant activation upon high-temperature annealing, J VAC SCI B, 17(3), 1999, pp. 1040-1044
Citation: V. Dimitrova et al., Optical and dielectric properties of dc magnetron sputtered AlN thin filmscorrelated with deposition conditions, MAT SCI E B, 68(1), 1999, pp. 1-4