Authors: Augendre, E Rooyackers, R Caymax, M Vandamme, EP De Keersgieter, A Perello, C Van Dievel, M Pochet, S Badenes, G

Citation: E. Augendre et al., Elevated source/drain by sacrificial selective epitaxy for high performance deep submicron CMOS: Process window versus complexity, IEEE DEVICE, 47(7), 2000, pp. 1484-1491