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Results: 3

Authors: Tyschenko, IE Zhuravlev, KS Vandyshev, EN Misiuk, A Yankov, RA Rebohle, L Skorupa, W
Citation: Ie. Tyschenko et al., Study of photoluminescence of SiOxNy films implanted with Ge+ ions and annealed under the conditions of hydrostatic pressure, SEMICONDUCT, 35(2), 2001, pp. 125-131

Authors: Tyschenko, IE Zhuravlev, KS Vandyshev, EN Misiuk, A Rebohle, L Skorupa, W Yankov, RA Popov, VP
Citation: Ie. Tyschenko et al., Enhancement of the intensity of violet and green photoluminescence from Ge+ ion-implanted SiOxNy films caused by hydrostatic pressure during annealing, OPT MATER, 17(1-2), 2001, pp. 99-102

Authors: Tyschenko, IE Zhuravlev, KS Vandyshev, EN Rebohle, L Misiuk, A Yankov, RA Skorupa, W
Citation: Ie. Tyschenko et al., Visible photoluminescence from germanium-implanted silicon oxynitride films after annealing under hydrostatic pressure, DEFECT DIFF, 186-1, 2000, pp. 71-77
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