Authors:
Tyschenko, IE
Zhuravlev, KS
Vandyshev, EN
Misiuk, A
Yankov, RA
Rebohle, L
Skorupa, W
Citation: Ie. Tyschenko et al., Study of photoluminescence of SiOxNy films implanted with Ge+ ions and annealed under the conditions of hydrostatic pressure, SEMICONDUCT, 35(2), 2001, pp. 125-131
Authors:
Tyschenko, IE
Zhuravlev, KS
Vandyshev, EN
Misiuk, A
Rebohle, L
Skorupa, W
Yankov, RA
Popov, VP
Citation: Ie. Tyschenko et al., Enhancement of the intensity of violet and green photoluminescence from Ge+ ion-implanted SiOxNy films caused by hydrostatic pressure during annealing, OPT MATER, 17(1-2), 2001, pp. 99-102
Authors:
Tyschenko, IE
Zhuravlev, KS
Vandyshev, EN
Rebohle, L
Misiuk, A
Yankov, RA
Skorupa, W
Citation: Ie. Tyschenko et al., Visible photoluminescence from germanium-implanted silicon oxynitride films after annealing under hydrostatic pressure, DEFECT DIFF, 186-1, 2000, pp. 71-77