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Results: 1-3 |
Results: 3
Characterization and performance comparison of the power DIMOS structure fabricated with a reduced thermal budget in 4H and 6H-SiC
Authors: Vathulya, VR White, MH
Citation: Vr. Vathulya et Mh. White, Characterization and performance comparison of the power DIMOS structure fabricated with a reduced thermal budget in 4H and 6H-SiC, SOL ST ELEC, 44(2), 2000, pp. 309-315
Characterization of inversion and accumulation layer electron transport in4H and 6H-SiC MOSFETs on implanted p-type regions
Authors: Vathulya, VR White, MH
Citation: Vr. Vathulya et Mh. White, Characterization of inversion and accumulation layer electron transport in4H and 6H-SiC MOSFETs on implanted p-type regions, IEEE DEVICE, 47(11), 2000, pp. 2018-2023
A novel 6H-SiC power DMOSFET with implanted P-well spacer
Authors: Vathulya, VR Shang, HL White, MH
Citation: Vr. Vathulya et al., A novel 6H-SiC power DMOSFET with implanted P-well spacer, IEEE ELEC D, 20(7), 1999, pp. 354-356
Risultati: 1-3 |