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Results: 1-10 |
Results: 10
X-ray diffractometric study of the influence of a buffer layer on the microstructure of molecular-beam epitaxial InN layers of different thicknesses
Authors: Ratnikov, VV Mamutin, VV Vekshin, VA Ivanov, SV
Citation: Vv. Ratnikov et al., X-ray diffractometric study of the influence of a buffer layer on the microstructure of molecular-beam epitaxial InN layers of different thicknesses, PHYS SOL ST, 43(5), 2001, pp. 949-954
Transmission electron microscopy of GaN columnar nanostructures grown by molecular beam epitaxy
Authors: Mamutin, VV Cherkashin, NA Vekshin, VA Zhmerik, VN Ivanov, SV
Citation: Vv. Mamutin et al., Transmission electron microscopy of GaN columnar nanostructures grown by molecular beam epitaxy, PHYS SOL ST, 43(1), 2001, pp. 151-156
Physical properties of InN with the band gap energy of 1.1eV
Authors: Inushima, T Mamutin, VV Vekshin, VA Ivanov, SV Sakon, T Motokawa, M Ohoya, S
Citation: T. Inushima et al., Physical properties of InN with the band gap energy of 1.1eV, J CRYST GR, 227, 2001, pp. 481-485
Hexagonal InN/sapphire heterostructures: interplay of interface and layer properties
Authors: Mamutin, VV Shubina, TV Vekshin, VA Ratnikov, VV Toropov, AA Ivanov, SV Karlsteen, M Sodervall, U Willander, M
Citation: Vv. Mamutin et al., Hexagonal InN/sapphire heterostructures: interplay of interface and layer properties, APPL SURF S, 166(1-4), 2000, pp. 87-91
Coaxial rf-magnetron nitrogen activator for GaN MBE growth
Authors: Jmerik, VN Mamutin, VV Vekshin, VA Shubina, TV Ivanov, SV Kop'ev, PS
Citation: Vn. Jmerik et al., Coaxial rf-magnetron nitrogen activator for GaN MBE growth, MAT SCI E B, 59(1-3), 1999, pp. 60-64
Optical properties of an AlInN interface layer spontaneously formed in hexagonal InN/sapphire heterostructures
Authors: Shubina, TV Mamutin, VV Vekshin, VA Ratnikov, VV Toropov, AA Sitnikova, AA Ivanov, SV Karlsteen, M Sodervall, U Willander, M Pozina, G Bergman, JP Monemar, B
Citation: Tv. Shubina et al., Optical properties of an AlInN interface layer spontaneously formed in hexagonal InN/sapphire heterostructures, PHYS ST S-B, 216(1), 1999, pp. 205-209
Optical and structural characterization of Ga(In)N three-dimensional nanostructures grown by plasma-assisted molecular beam epitaxy
Authors: Pozina, G Bergman, JP Monemar, B Mamutin, VV Shubina, TV Vekshin, VA Toropov, AA Ivanov, SV Karlsteen, M Willander, M
Citation: G. Pozina et al., Optical and structural characterization of Ga(In)N three-dimensional nanostructures grown by plasma-assisted molecular beam epitaxy, PHYS ST S-B, 216(1), 1999, pp. 445-450
MBE growth of hexagonal InN films on sapphire with different initial growth stages
Authors: Mamutin, VV Vekshin, VA Davydov, VY Ratnikov, VV Shubina, TV Ivanov, SV Kopev, PS Karlsteen, M Soderwall, U Willander, M
Citation: Vv. Mamutin et al., MBE growth of hexagonal InN films on sapphire with different initial growth stages, PHYS ST S-A, 176(1), 1999, pp. 247-252
Mg-doped hexagonal InN/Al2O3 films grown by MBE
Authors: Mamutin, VV Vekshin, VA Davydov, VY Ratnikov, VV Kudriavtsev, YA Ber, BY Emtsev, VV Ivanov, SV
Citation: Vv. Mamutin et al., Mg-doped hexagonal InN/Al2O3 films grown by MBE, PHYS ST S-A, 176(1), 1999, pp. 373-378
Experimental and theoretical studies of phonons in hexagonal InN
Authors: Davydov, VY Emtsev, VV Goncharuk, IN Smirnov, AN Petrikov, VD Mamutin, VV Vekshin, VA Ivanov, SV Smirnov, MB Inushima, T
Citation: Vy. Davydov et al., Experimental and theoretical studies of phonons in hexagonal InN, APPL PHYS L, 75(21), 1999, pp. 3297-3299
Risultati: 1-10 |