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The use of the amphoteric nature of impurity silicon atoms for obtaining planar p-n junctions on GaAs (111)A substrates by molecular beam epitaxy
Authors: Galiev, GB Kaminskii, VE Mokerov, VG Velikhovskii, LE
Citation: Gb. Galiev et al., The use of the amphoteric nature of impurity silicon atoms for obtaining planar p-n junctions on GaAs (111)A substrates by molecular beam epitaxy, SEMICONDUCT, 35(4), 2001, pp. 415-418
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