Citation: A. Vertikov et al., Diffusion and relaxation of excess carriers in InGaN quantum wells in localized versus extended states, J APPL PHYS, 86(8), 1999, pp. 4697-4699
Citation: A. Vertikov et al., Investigation of excess carrier diffusion in nitride semiconductors with near-field optical microscopy, APPL PHYS L, 74(6), 1999, pp. 850-852