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Results: 3
Strain state in GaN epilayers from optical experiments
Authors:
Deleporte, E Guenaud, C Voos, M Beaumont, B Gibart, P
Citation:
E. Deleporte et al., Strain state in GaN epilayers from optical experiments, J APPL PHYS, 89(2), 2001, pp. 1116-1119
Dossier - Wide gap semiconductors - Foreword
Authors:
Voos, M
Citation:
M. Voos, Dossier - Wide gap semiconductors - Foreword, CR AC S IV, 1(1), 2000, pp. 4-4
Evolution with temperature of the strain state of GaN thin layers grown ondifferent substrates
Authors:
Deleporte, E Guenaud, C Voos, M Beaumont, B Gibart, P
Citation:
E. Deleporte et al., Evolution with temperature of the strain state of GaN thin layers grown ondifferent substrates, PHYS ST S-B, 216(1), 1999, pp. 713-717
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