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Results: 1-15 |
Results: 15
OUT-DIFFUSION OF ZN FROM SI - A METHOD TO STUDY VACANCY PROPERTIES INSI
Authors: GIESE A BRACHT H STOLWIJK NA WALTON JT
Citation: A. Giese et al., OUT-DIFFUSION OF ZN FROM SI - A METHOD TO STUDY VACANCY PROPERTIES INSI, Journal of applied physics, 83(12), 1998, pp. 8062-8064
HEAVY-ION RESPONSE OF AMORPHOUS-SILICON TRANSMISSION DETECTORS FOR PARTICLE IDENTIFICATION
Authors: AMMAN M BEAULIEU L HONG WS PHAIR L WALTON JT WOZNIAK GJ
Citation: M. Amman et al., HEAVY-ION RESPONSE OF AMORPHOUS-SILICON TRANSMISSION DETECTORS FOR PARTICLE IDENTIFICATION, IEEE transactions on nuclear science, 45(3), 1998, pp. 676-680
AMORPHOUS-SILICON CRYSTALLINE SILICON HETEROJUNCTIONS FOR NUCLEAR RADIATION DETECTOR APPLICATIONS
Authors: WALTON JT HONG WS LUKE PN WANG NW ZIEMBA FP
Citation: Jt. Walton et al., AMORPHOUS-SILICON CRYSTALLINE SILICON HETEROJUNCTIONS FOR NUCLEAR RADIATION DETECTOR APPLICATIONS, IEEE transactions on nuclear science, 44(3), 1997, pp. 961-964
ENERGY SAVINGS IN CLEANROOMS FROM DEMAND-CONTROLLED FILTRATION
Authors: FAULKNER D FISK WJ WALTON JT
Citation: D. Faulkner et al., ENERGY SAVINGS IN CLEANROOMS FROM DEMAND-CONTROLLED FILTRATION, Journal of the IES, 39(6), 1996, pp. 21-27
P-TYPE SILICON DRIFT DETECTORS
Authors: WALTON JT KROFCHECK D ODONNELL R ODYNIEC G PARTLAN MD WANG NW
Citation: Jt. Walton et al., P-TYPE SILICON DRIFT DETECTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 377(2-3), 1996, pp. 357-361
LARGE-DIAMETER LITHIUM COMPENSATED SILICON DETECTORS FOR THE NASA ADVANCED COMPOSITION EXPLORER (ACE) MISSION
Authors: ALLBRITTON GL ANDERSEN H BARNES A CHRISTIAN ER CUMMINGS AC DOUGHERTY BL JENSEN L LEE J LESKE RA MADDEN MP MEWALDT R MILLIKEN B NAHORY BW ODONNELL R SCHMIDT P SEARS BR VONROSENVINGE TT WALTON JT WIEDENBECK ME WONG YK
Citation: Gl. Allbritton et al., LARGE-DIAMETER LITHIUM COMPENSATED SILICON DETECTORS FOR THE NASA ADVANCED COMPOSITION EXPLORER (ACE) MISSION, IEEE transactions on nuclear science, 43(3), 1996, pp. 1505-1509
EVIDENCE FOR THE POSSIBLE SYNTHESIS OF ELEMENT-110 PRODUCED BY THE CO-59-209 REACTION(BI)
Authors: GHIORSO A LEE D SOMERVILLE LP LOVELAND W NITSCHKE JM GHIORSO W SEABORG GT WILMARTH P LERES R WYDLER A NURMIA M GREGORICH K CZERWINSKI K GAYLORD R HAMILTON T HANNINK NJ HOFFMAN DC JARZYNSKI C KACHER C KADKHODAYAN B KREEK S LANE M LYON A MCMAHAN MA NEU M SIKKELAND T SWIATECKI WJ TURLER A WALTON JT YASHITA S
Citation: A. Ghiorso et al., EVIDENCE FOR THE POSSIBLE SYNTHESIS OF ELEMENT-110 PRODUCED BY THE CO-59-209 REACTION(BI), Physical review. C. Nuclear physics, 51(5), 1995, pp. 2293-2297
EVIDENCE FOR THE SYNTHESIS OF (267)110 PRODUCED BY THE CO-59-209 REACTION(BI)
Authors: GHIORSO A LEE D SOMERVILLE LP LOVELAND W NITSCHKE JM GHIORSO W SEABORG GT WILMARTH P LERES R WYDLER A NURMIA M GREGORICH K GAYLORD R HAMILTON T HANNINK NJ HOFFMAN DC JARZYNSKI C KACHER C KADKHODAYAN B KREEK S LANE M LYON A MCMAHAN MA NEU M SIKKELAND T SWIATECKI WJ TURLER A WALTON JT YASHITA S
Citation: A. Ghiorso et al., EVIDENCE FOR THE SYNTHESIS OF (267)110 PRODUCED BY THE CO-59-209 REACTION(BI), Nuclear physics. A, 583, 1995, pp. 861-866
P-TYPE SILICON DRIFT DETECTORS - FIRST RESULTS
Authors: WANG NW KRIEGER B KROFCHECK D LEWAK D NAUDET CJ ODONNELL R ODYNIEC G PARTLAN M RUDOLPH HW WALTON JT WILSON WK
Citation: Nw. Wang et al., P-TYPE SILICON DRIFT DETECTORS - FIRST RESULTS, IEEE transactions on nuclear science, 42(4), 1995, pp. 214-218
MULTI-LINE GAMMA-RAY SPECTROMETER PERFORMANCE OF A SI(LI) DETECTOR STACK
Authors: HUBBARD GS MCMURRAY RE KELLER RG WERCINSKI PF WALTON JT
Citation: Gs. Hubbard et al., MULTI-LINE GAMMA-RAY SPECTROMETER PERFORMANCE OF A SI(LI) DETECTOR STACK, IEEE transactions on nuclear science, 42(4), 1995, pp. 441-444
PROPER INTERPRETATION OF PHOTOCONDUCTIVE DECAY TRANSIENTS IN SEMICONDUCTORS HAVING FINITE SURFACE RECOMBINATION VELOCITY
Authors: DERHACOBIAN N WALTON JT LUKE PN WONG YK ROSSINGTON CS
Citation: N. Derhacobian et al., PROPER INTERPRETATION OF PHOTOCONDUCTIVE DECAY TRANSIENTS IN SEMICONDUCTORS HAVING FINITE SURFACE RECOMBINATION VELOCITY, Journal of applied physics, 76(8), 1994, pp. 4663-4669
DETERMINATION OF SURFACE RECOMBINATION VELOCITY AND BULK LIFETIME IN DETECTOR-GRADE SILICON AND GERMANIUM-CRYSTALS
Authors: DERHACOBIAN N FINE P WALTON JT WONG YK ROSSINGTON CS LUKE PN
Citation: N. Derhacobian et al., DETERMINATION OF SURFACE RECOMBINATION VELOCITY AND BULK LIFETIME IN DETECTOR-GRADE SILICON AND GERMANIUM-CRYSTALS, IEEE transactions on nuclear science, 41(4), 1994, pp. 1026-1030
LITHIUM DRIFTED SILICON DETECTOR FABRICATION ON GETTERED FLOATING-ZONE SILICON
Authors: WALTON JT WONG YK DERHACOBIAN N HALLER EE
Citation: Jt. Walton et al., LITHIUM DRIFTED SILICON DETECTOR FABRICATION ON GETTERED FLOATING-ZONE SILICON, IEEE transactions on nuclear science, 41(4), 1994, pp. 1031-1036
VARIABLE-TEMPERATURE PERFORMANCE OF A SI(LI) DETECTOR STACK
Authors: HUBBARD GS MCMURRAY RE KELLER RG WERCINSKI PF WALTON JT WONG YK
Citation: Gs. Hubbard et al., VARIABLE-TEMPERATURE PERFORMANCE OF A SI(LI) DETECTOR STACK, IEEE transactions on nuclear science, 41(4), 1994, pp. 1338-1342
LITHIUM-ION MOBILITY IMPROVEMENT IN FLOATING-ZONE SILICON BY EXTERNALGETTERING
Authors: WALTON JT DERHACOBIAN N WONG YK HALLER EE
Citation: Jt. Walton et al., LITHIUM-ION MOBILITY IMPROVEMENT IN FLOATING-ZONE SILICON BY EXTERNALGETTERING, Applied physics letters, 63(3), 1993, pp. 343-345
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