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Results:
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Results: 2
PERFORMANCE AND RELIABILITY ENHANCEMENT FOR CVD TUNGSTEN POLYCIDED CMOS TRANSISTORS DUE TO FLUORINE INCORPORATION IN THE GATE OXIDE
Authors:
CHEN IC RODDER M WANN HJ SPRATT D
Citation:
Ic. Chen et al., PERFORMANCE AND RELIABILITY ENHANCEMENT FOR CVD TUNGSTEN POLYCIDED CMOS TRANSISTORS DUE TO FLUORINE INCORPORATION IN THE GATE OXIDE, IEEE electron device letters, 15(9), 1994, pp. 351-353
HOT-CARRIER EFFECTS IN THIN-FILM FULLY DEPLETED SOI MOSFETS
Authors:
MA ZJ WANN HJ CHAN M KING JC CHENG YC KO PK HU C
Citation:
Zj. Ma et al., HOT-CARRIER EFFECTS IN THIN-FILM FULLY DEPLETED SOI MOSFETS, IEEE electron device letters, 15(6), 1994, pp. 218-220
Risultati:
1-2
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