Authors:
HILL WL
VOGEL E
MCLARTY PK
MISRA V
WORTMAN JJ
WATT V
Citation: Wl. Hill et al., N-CHANNEL AND P-CHANNEL MOSFETS WITH OXYNITRIDE GATE DIELECTRICS FORMED USING LOW-PRESSURE RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION, Microelectronic engineering, 28(1-4), 1995, pp. 269-272