N-CHANNEL AND P-CHANNEL MOSFETS WITH OXYNITRIDE GATE DIELECTRICS FORMED USING LOW-PRESSURE RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION

Silicon oxynitride has become an interesting alternative to silicon di oxide for use as a gate dielectric. Typically, these oxynitride films are formed by thermally growing the dielectric with a N2O gas source o r by performing a post-oxidation anneal in ammonia [1,2]. Both of thes e techniques increase the thermal budget requirement because of the sl ower growth rate in N2O and the extra high temperature process step re quired for the thermal nitridation. In this work, the properties of bo th n-channel and p-channel transistors with oxynitride gate dielectric s formed using a low pressure, rapid thermal chemical vapor deposition (RTCVD) process is presented.