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Results: 1-25/87
Authors:
ISTRATOV AA
VYVENKO OF
HIESLMAIR H
WEBER ER
Citation: Aa. Istratov et al., CRITICAL ANALYSIS OF WEIGHTING FUNCTIONS FOR THE DEEP-LEVEL TRANSIENTSPECTROSCOPY OF SEMICONDUCTORS, Measurement science & technology, 9(3), 1998, pp. 477-484
Authors:
HEINRICH AJ
WENDEROTH M
ROSENTRETER MA
ENGEL K
SCHNEIDER MA
ULBRICH RG
WEBER ER
UCHIDA K
Citation: Aj. Heinrich et al., ORDERING IN TERNARY COMPOUND SEMICONDUCTORS STUDIED WITH CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY, Applied physics A: Materials science & processing, 66, 1998, pp. 959-962
Authors:
ISTRATOV AA
WEBER ER
Citation: Aa. Istratov et Er. Weber, ELECTRICAL-PROPERTIES AND RECOMBINATION ACTIVITY OF COPPER, NICKEL AND COBALT IN SILICON, Applied physics A: Materials science & processing, 66(2), 1998, pp. 123-136
Authors:
MO S
PEINER E
SCHLACHETZKI A
KLOCKENBRINK R
WEBER ER
Citation: S. Mo et al., SELECTED-AREA ELECTRON-CHANNELING PATTERN AS A CHARACTERIZATION METHOD FOR HETEROEPITAXIAL LAYERS, Materials science & engineering. B, Solid-state materials for advanced technology, 56(1), 1998, pp. 37-42
Authors:
ROUVIMOV S
LILIENTALWEBER Z
SWIDER W
WASHBURN J
WEBER ER
SASAKI A
WAKAHARA A
FURKAWA Y
ABE T
NODA S
Citation: S. Rouvimov et al., EFFECTS OF GAAS-SPACER STRAIN ON VERTICAL ORDERING OF STACKED INAS QUANTUM DOTS IN A GAAS MATRIX, Journal of electronic materials, 27(5), 1998, pp. 427-432
Authors:
SUDHIR GS
FUJII H
WONG WS
KISIELOWSKI C
NEWMAN N
DIEKER C
LILIENTALWEBER Z
RUBIN MD
WEBER ER
Citation: Gs. Sudhir et al., CONTROL OF THE STRUCTURE AND SURFACE-MORPHOLOGY OF GALLIUM NITRIDE AND ALUMINUM NITRIDE THIN-FILMS BY NITROGEN BACKGROUND PRESSURE IN PULSED-LASER DEPOSITION, Journal of electronic materials, 27(4), 1998, pp. 215-221
Authors:
SUDHIR GS
FUJII H
WONG WS
KISIELOWSKI C
NEWMAN N
DIEKER C
LILIENTALWEBER Z
RUBIN MD
WEBER ER
Citation: Gs. Sudhir et al., PULSED-LASER DEPOSITION OF ALUMINUM NITRIDE AND GALLIUM NITRIDE THIN, Applied surface science, 129, 1998, pp. 471-476
Authors:
HEISER T
WEBER ER
Citation: T. Heiser et Er. Weber, TRANSIENT ION-DRIFT-INDUCED CAPACITANCE SIGNALS IN SEMICONDUCTORS, Physical review. B, Condensed matter, 58(7), 1998, pp. 3893-3903
Authors:
PRASAD A
STALLINGA P
LIU X
WEBER ER
Citation: A. Prasad et al., ORIGIN OF THE MAGNETIC CIRCULAR-DICHROISM OF ABSORPTION OF THE ARSENIC ANTISITE IN GAAS AND ALXGA1-XAS, Physical review. B, Condensed matter, 57(8), 1998, pp. 4214-4217
Authors:
ISTRATOV AA
HIESLMAIR H
FLINK C
WEBER ER
Citation: Aa. Istratov et al., DETERMINATION OF PARAMETERS OF DEEP-LEVEL DEFECTS FROM NUMERICAL FIT OF DEEP-LEVEL TRANSIENT SPECTROSCOPY SPECTRA - ANALYSIS OF ACCURACY AND SENSITIVITY TO NOISE, Review of scientific instruments, 69(1), 1998, pp. 244-250
Authors:
ISTRATOV AA
FLINK C
HIESLMAIR H
WEBER ER
Citation: Aa. Istratov et al., INTRINSIC DIFFUSION-COEFFICIENT OF INTERSTITIAL COPPER IN SILICON, Physical review letters, 81(6), 1998, pp. 1243-1246
Authors:
HIESLMAIR H
ISTRATOV AA
HEISER T
WEBER ER
Citation: H. Hieslmair et al., EVALUATION OF PRECIPITATE DENSITIES AND CAPTURE RADII FROM THE ANALYSIS OF PRECIPITATION KINETICS, Journal of applied physics, 84(2), 1998, pp. 713-717
Authors:
LUYSBERG M
SOHN H
PRASAD A
SPECHT P
LILIENTALWEBER Z
WEBER ER
GEBAUER J
KRAUSEREHBERG R
Citation: M. Luysberg et al., EFFECTS OF THE GROWTH TEMPERATURE AND AS GA FLUX RATIO ON THE INCORPORATION OF EXCESS AS INTO LOW-TEMPERATURE-GROWN GAAS/, Journal of applied physics, 83(1), 1998, pp. 561-566
Authors:
MCHUGO SA
WEBER ER
MYERS SM
PETERSEN GA
Citation: Sa. Mchugo et al., GETTERING OF IRON TO IMPLANTATION-INDUCED CAVITIES AND OXYGEN PRECIPITATES IN SILICON, Journal of the Electrochemical Society, 145(4), 1998, pp. 1400-1405
Authors:
HIESLMAIR H
ISTRATOV AA
MCHUGO SA
FLINK C
WEBER ER
Citation: H. Hieslmair et al., ANALYSIS OF IRON PRECIPITATION IN SILICON AS A BASIS FOR GETTERING SIMULATIONS, Journal of the Electrochemical Society, 145(12), 1998, pp. 4259-4264
Authors:
ISTRATOV AA
HEDEMANN H
SEIBT M
VYVENKO OF
SCHROTER W
HEISER T
FLINK C
HIESLMAIR H
WEBER ER
Citation: Aa. Istratov et al., ELECTRICAL AND RECOMBINATION PROPERTIES OF COPPER-SILICIDE PRECIPITATES IN SILICON, Journal of the Electrochemical Society, 145(11), 1998, pp. 3889-3898
Authors:
PERLIN P
KISIELOWSKI C
IOTA V
WEINSTEIN BA
MATTOS L
SHAPIRO NA
KRUGER J
WEBER ER
YANG JW
Citation: P. Perlin et al., INGAN GAN QUANTUM-WELLS STUDIED BY HIGH-PRESSURE, VARIABLE-TEMPERATURE, AND EXCITATION POWER SPECTROSCOPY/, Applied physics letters, 73(19), 1998, pp. 2778-2780
Authors:
MALTEZ RL
LILIENTALWEBER Z
WASHBURN J
BEHAR M
KLEIN PB
SPECHT P
WEBER ER
Citation: Rl. Maltez et al., TRANSMISSION ELECTRON-MICROSCOPY AND PHOTOLUMINESCENCE STUDIES OF ER IMPLANTED LOW-TEMPERATURE-GROWN GAAS-BE, Applied physics letters, 73(15), 1998, pp. 2170-2172
Authors:
TEO KL
COLTON JS
YU PY
WEBER ER
LI MF
LIU W
UCHIDA K
TOKUNAGA H
AKUTSU N
MATSUMOTO K
Citation: Kl. Teo et al., AN ANALYSIS OF TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE LINE-SHAPES ININGAN, Applied physics letters, 73(12), 1998, pp. 1697-1699
Authors:
MCHUGO SA
MCDONALD RJ
SMITH AR
HURLEY DL
WEBER ER
Citation: Sa. Mchugo et al., IRON SOLUBILITY IN HIGHLY BORON-DOPED SILICON, Applied physics letters, 73(10), 1998, pp. 1424-1426
Authors:
ISTRATOV AA
HIESLMAIR H
HEISER T
FLINK C
WEBER ER
Citation: Aa. Istratov et al., THE DISSOCIATION-ENERGY AND THE CHARGE-STATE OF A COPPER-PAIR CENTER IN SILICON, Applied physics letters, 72(4), 1998, pp. 474-476
Authors:
USTINOV VM
WEBER ER
RUVIMOV S
LILIENTALWEBER Z
ZHUKOV AE
EGOROV AY
KOVSH AR
TSATSULNIKOV AF
KOPEV PS
Citation: Vm. Ustinov et al., EFFECT OF MATRIX ON INAS SELF-ORGANIZED QUANTUM DOTS ON INP SUBSTRATE, Applied physics letters, 72(3), 1998, pp. 362-364
Authors:
HIESLMAIR H
ISTRATOV AA
MCHUGO SA
FLINK C
HEISER T
WEBER ER
Citation: H. Hieslmair et al., GETTERING OF IRON BY OXYGEN PRECIPITATES, Applied physics letters, 72(12), 1998, pp. 1460-1462
Authors:
MCHUGO SA
HIESLMAIR H
WEBER ER
Citation: Sa. Mchugo et al., GETTERING OF METALLIC IMPURITIES IN PHOTOVOLTAIC SILICON, Applied physics A: Materials science & processing, 64(2), 1997, pp. 127-137
Authors:
LEON R
WILLIAMS DRM
KRUEGER J
WEBER ER
MELLOCH MR
Citation: R. Leon et al., DIFFUSIVITY TRANSIENTS AND RADIATIVE RECOMBINATION IN INTERMIXED IN0.5GA0.5AS GAAS QUANTUM STRUCTURES/, Physical review. B, Condensed matter, 56(8), 1997, pp. 4336-4339