Authors: AHRENS C FERRETTI R FRIESE G WEIDNER JO

Citation: C. Ahrens et al., THERMAL-STRESS EFFECTS ON CAPACITANCE AND CURRENT CHARACTERISTICS OF CU SI AND CU/TIN/SI SCHOTTKY-DIODES/, Microelectronic engineering, 37-8(1-4), 1997, pp. 211-219

Authors: SAVE D BRAUD F TORRES J BINDER F MULLER C WEIDNER JO HASSE W

Citation: D. Save et al., ELECTROMIGRATION RESISTANCE OF COPPER INTERCONNECTS, Microelectronic engineering, 33(1-4), 1997, pp. 75-84

Authors: SCHULZ SE WEIDNER JO HASSE W

Citation: Se. Schulz et al., ENHANCED RELIABILITY OF W-ENCAPSULATED ALSI-INTERCONNECTIONS USING SELECTIVE W-CVD, Microelectronic engineering, 33(1-4), 1997, pp. 113-120

Authors: WEIDNER JO HOFMANN KR HOFMANN F RISCH L

Citation: Jo. Weidner et al., CHARACTERIZATION OF SIGE QUANTUM-WELL P-CHANNEL MOSFETS, Journal of materials science. Materials in electronics, 6(5), 1995, pp. 325-329