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EFFECT OF THE SILICON TOP LAYER OF SILICON IMPLANTED WITH OXYGEN ON THE UPTAKE AND RELEASE OF DEUTERIUM BY THE BURIED OXIDE
Authors: ZIMMERMANN L DENIJS JMM ALKEMADE PFA WESTERDUIN K VANVEEN A
Citation: L. Zimmermann et al., EFFECT OF THE SILICON TOP LAYER OF SILICON IMPLANTED WITH OXYGEN ON THE UPTAKE AND RELEASE OF DEUTERIUM BY THE BURIED OXIDE, Applied physics letters, 73(6), 1998, pp. 774-776
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