Authors: WETHKAMP T WILMERS K ESSER N RICHTER W AMBACHER O ANGERER H JUNGK G JOHNSON RL CARDONA M

Citation: T. Wethkamp et al., SPECTROSCOPIC ELLIPSOMETRY MEASUREMENTS OF ALXGA1-XN IN THE ENERGY-RANGE 3-25EV, Thin solid films, 313, 1998, pp. 745-750

Authors: ZORN M TREPK T ZETTLER JT JUNNO B MEYNE C KNORR K WETHKAMP T KLEIN M MILLER M RICHTER W SAMUELSON L

Citation: M. Zorn et al., TEMPERATURE-DEPENDENCE OF THE INP(001) BULK AND SURFACE DIELECTRIC FUNCTION, Applied physics A: Materials science & processing, 65(3), 1997, pp. 333-339

Authors: STEIMETZ E ZETTLER JT SCHIENLE F TREPK T WETHKAMP T RICHTER W SIEBER I

Citation: E. Steimetz et al., TN SITU MONITORING OF INAS-ON-GAAS QUANTUM-DOT FORMATION IN MOVPE BY REFLECTANCE-ANISOTROPY-SPECTROSCOPY AND ELLIPSOMETRY, Applied surface science, 107, 1996, pp. 203-211

Authors: ZETTLER JT WETHKAMP T ZORN M PRISTOVSEK M MEYNE C PLOSKA K RICHTER W

Citation: Jt. Zettler et al., GROWTH OSCILLATIONS WITH MONOLAYER PERIODICITY MONITORED BY ELLIPSOMETRY DURING METALORGANIC VAPOR-PHASE EPITAXY OF GAAS(001), Applied physics letters, 67(25), 1995, pp. 3783-3785