Authors: WHALEY RD GOPALAN B DAGENAIS M GOMEZ RD JOHNSON FG AGARWALA S KING O STONE DR

Citation: Rd. Whaley et al., USE OF ATOMIC-FORCE MICROSCOPY FOR ANALYSIS OF HIGH-PERFORMANCE INGAASP INP SEMICONDUCTOR-LASERS WITH DRY-ETCHED FACETS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1007-1011

Authors: VUSIRIKALA V SAINI SS BARTOLO RE AGARWALA S WHALEY RD JOHNSON FG STONE DR DAGENAIS M

Citation: V. Vusirikala et al., 1.55-MU-M INGAASP-INP LASER ARRAYS WITH INTEGRATED-MODE EXPANDERS FABRICATED USING A SINGLE EPITAXIAL-GROWTH, IEEE journal of selected topics in quantum electronics, 3(6), 1997, pp. 1332-1343

Authors: SEIFERTH F JOHNSON FG MERRITT SA FOX S WHALEY RD CHEN YJ DAGENAIS M STONE DR

Citation: F. Seiferth et al., POLARIZATION-INSENSITIVE 1.55-MU-M OPTICAL AMPLIFIER WITH GAAS DELTA-STRAINED GA0.47IN0.53AS QUANTUM-WELLS, IEEE photonics technology letters, 9(10), 1997, pp. 1340-1342

Authors: JOHNSON FG KING O SEIFERTH F HORST S STONE DR WHALEY RD DAGENAIS M CHEN YJ

Citation: Fg. Johnson et al., SOLID SOURCE MBE GROWTH AND REGROWTH OF 1.55 MU-M WAVELENGTH GAINASP INP RIDGE LASERS/, Journal of crystal growth, 175, 1997, pp. 46-51

Authors: JOHNSON FG KING O SEIFERTH F STONE DR WHALEY RD DAGENAIS M CHEN YJ

Citation: Fg. Johnson et al., SOLID SOURCE MOLECULAR-BEAM EPITAXY OF LOW-THRESHOLD 1.55 MU-M WAVELENGTH GAINAS GAINASP/INP SEMICONDUCTOR-LASERS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2753-2756