SOLID SOURCE MBE GROWTH AND REGROWTH OF 1.55 MU-M WAVELENGTH GAINASP INP RIDGE LASERS/

We report on the solid source molecular beam epitaxial growth of GaxIn (1-x)AsyP(1-y) and its application to separate confinement heterostruc ture laser diodes operating at 1.55 mu m. High-quality quaternary film s were grown reproducibly with a band gap wavelength of 1.3 mu m. Sepa rate confinement heterostructure laser diodes operating at 1.55 mu m w ere produced with active regions containing four Ga0.47In0.53As, Ga0.2 7In0.73As0.8P0.2, or InAs0.6P0.4 quantum wells. Broad area laser thres hold current densities were as low as 275 ii.;cml and equal tile best results reported for similar devices grown by other techniques. Ridge lasers were fabricated with threshold currents of 20 mA and external q uantum efficiencies of 0.21 mW/mA per facet. Specular InP was regrown over etched ridges and was used to produce buried ridge laser diodes.