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Results: 1-25 | 26-35 |
Results: 26-35/35
ELASTIC AND INELASTIC TUNNELING IN A STRAINED-LAYER DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURE
Authors: TAGG WIE WHITE CRH SKOLNICK MS EAVES L EMENY MT WHITEHOUSE CR
Citation: Wie. Tagg et al., ELASTIC AND INELASTIC TUNNELING IN A STRAINED-LAYER DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURE, Physical review. B, Condensed matter, 48(7), 1993, pp. 4487-4491
X-RAY TOPOGRAPHY OF LATTICE-RELAXATION IN STRAINED-LAYER SEMICONDUCTORS - POSTGROWTH STUDIES AND A NEW FACILITY FOR INSITU TOPOGRAPHY DURING MBE GROWTH
Authors: BARNETT SJ WHITEHOUSE CR KEIR AM CLARK GF USHER B TANNER BK EMENY MT JOHNSON AD
Citation: Sj. Barnett et al., X-RAY TOPOGRAPHY OF LATTICE-RELAXATION IN STRAINED-LAYER SEMICONDUCTORS - POSTGROWTH STUDIES AND A NEW FACILITY FOR INSITU TOPOGRAPHY DURING MBE GROWTH, Journal of physics. D, Applied physics, 26(4A), 1993, pp. 45-49
MECHANISTIC STUDIES OF THE CBE GROWTH OF (100) GAAS USING THE NEW PRECURSOR TRI-ISOPROPYLGALLIUM
Authors: FREER RW MARTIN T LANE PA WHITEHOUSE CR HOGAN R FOORD JS JONES AC
Citation: Rw. Freer et al., MECHANISTIC STUDIES OF THE CBE GROWTH OF (100) GAAS USING THE NEW PRECURSOR TRI-ISOPROPYLGALLIUM, Journal of crystal growth, 127(1-4), 1993, pp. 152-157
SELECTIVE AREA 2-DIMENSIONAL ELECTRON-GAS STRUCTURES AND INSITU OHMICCONTACTS PATTERNED BY FOCUSED ION-BEAM DOPING DURING MOLECULAR-BEAM EPITAXIAL-GROWTH
Authors: THOMPSON JH JONES GAC RITCHIE DA LINFIELD EH HOULTON M SMITH GW WHITEHOUSE CR
Citation: Jh. Thompson et al., SELECTIVE AREA 2-DIMENSIONAL ELECTRON-GAS STRUCTURES AND INSITU OHMICCONTACTS PATTERNED BY FOCUSED ION-BEAM DOPING DURING MOLECULAR-BEAM EPITAXIAL-GROWTH, Journal of crystal growth, 127(1-4), 1993, pp. 732-736
REAL-TIME LASER-LIGHT SCATTERING STUDIES OF SURFACE-TOPOGRAPHY DEVELOPMENT DURING GAAS MBE GROWTH
Authors: SMITH GW PIDDUCK AJ WHITEHOUSE CR GLASPER JL SPOWART J
Citation: Gw. Smith et al., REAL-TIME LASER-LIGHT SCATTERING STUDIES OF SURFACE-TOPOGRAPHY DEVELOPMENT DURING GAAS MBE GROWTH, Journal of crystal growth, 127(1-4), 1993, pp. 966-971
EFFECT OF ION ENERGY ON SN DONOR ACTIVATION AND DEFECT PRODUCTION IN MOLECULAR-BEAM EPITAXY GAAS DOPED WITH SN IONS DURING GROWTH
Authors: THOMPSON JH JONES GAC RITCHIE DA LINFIELD EH CHURCHILL AC SMITH GW HOULTON M LEE D WHITEHOUSE CR
Citation: Jh. Thompson et al., EFFECT OF ION ENERGY ON SN DONOR ACTIVATION AND DEFECT PRODUCTION IN MOLECULAR-BEAM EPITAXY GAAS DOPED WITH SN IONS DURING GROWTH, Journal of applied physics, 74(7), 1993, pp. 4375-4381
ELECTRON MOBILITIES AND PHOTOELECTRON LIFETIMES IN ALGAAS GAAS AND INGAAS GAAS QUANTUM-WELL INFRARED DETECTORS
Authors: KANE MJ MILLIDGE S EMENY MT GUY DRP LEE D WHITEHOUSE CR
Citation: Mj. Kane et al., ELECTRON MOBILITIES AND PHOTOELECTRON LIFETIMES IN ALGAAS GAAS AND INGAAS GAAS QUANTUM-WELL INFRARED DETECTORS, Journal of applied physics, 73(11), 1993, pp. 7966-7968
OPTIMIZATION OF THE GROWTH-PARAMETERS FOR THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF STRAINED IN0.16GA0.84AS AL0.33GA0.67AS SINGLE-QUANTUM-WELLSTRUCTURES/
Authors: EMENY MT SKOLNICK MS WHITEHOUSE CR HAYES DG CALCOTT PDJ HIGGS AW
Citation: Mt. Emeny et al., OPTIMIZATION OF THE GROWTH-PARAMETERS FOR THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF STRAINED IN0.16GA0.84AS AL0.33GA0.67AS SINGLE-QUANTUM-WELLSTRUCTURES/, Applied physics letters, 63(6), 1993, pp. 824-826
ELECTRON-TRANSPORT IN DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES STUDIED BY OPTICAL SPECTROSCOPY
Authors: SKOLNICK MS SIMMONDS PE HAYES DG WHITE CRH EAVES L HIGGS AW HENINI M HUGHES OH SMITH GW WHITEHOUSE CR
Citation: Ms. Skolnick et al., ELECTRON-TRANSPORT IN DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES STUDIED BY OPTICAL SPECTROSCOPY, Semiconductor science and technology, 7(3B), 1992, pp. 401-408
RESONANT RAMAN-SCATTERING IN GAAS ALAS QUANTUM-WELLS/
Authors: HAYES W SPRINGETT R SKOLNICK MS SMITH GW WHITEHOUSE CR
Citation: W. Hayes et al., RESONANT RAMAN-SCATTERING IN GAAS ALAS QUANTUM-WELLS/, Semiconductor science and technology, 7(3), 1992, pp. 379-384
Risultati: 1-25 | 26-35 |