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Results:
1-7
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Results: 7
Authors:
LEVER RF
BONAR JM
WILLOUGHBY AFW
Citation: Rf. Lever et al., BORON-DIFFUSION ACROSS SILICON-SILICON GERMANIUM BOUNDARIES, Journal of applied physics, 83(4), 1998, pp. 1988-1994
Authors:
CONIBEER GJ
WILLOUGHBY AFW
HARDINGHAM CM
SHARMA VKM
Citation: Gj. Conibeer et al., ZINC DIFFUSION IN TELLURIUM DOPED GALLIUM ANTIMONIDE, Optical materials, 6(1-2), 1996, pp. 21-25
Authors:
CONIBEER GJ
WILLOUGHBY AFW
HARDINGHAM CM
SHARMA VKM
Citation: Gj. Conibeer et al., ZINC DIFFUSION IN TELLURIUM DOPED GALLIUM ANTIMONIDE, Journal of electronic materials, 25(7), 1996, pp. 1108-1112
Authors:
WASENCZUK A
WILLOUGHBY AFW
MACKETT P
OKEEFE E
CAPPER P
MAXEY CD
Citation: A. Wasenczuk et al., EXTENDED DEFECTS IN EPITAXIAL CADMIUM MERCURY TELLURIDE, Journal of crystal growth, 159(1-4), 1996, pp. 1090-1095
Authors:
MORANTE JR
WILLOUGHBY AFW
Citation: Jr. Morante et Afw. Willoughby, 1ST INTERNATIONAL-CONFERENCE ON MATERIALS FOR MICROELECTRONICS - BARCELONA, SPAIN, 17-10 OCTOBER 1994, Materials science and technology, 11(1), 1995, pp. 1-1
Authors:
WILLOUGHBY AFW
Citation: Afw. Willoughby, THE CONTROL OF RADIATION-RESISTANCE IN-SPACE SOLAR-CELLS, International journal of electronics, 76(5), 1994, pp. 865-882
Authors:
ARCHER NA
PALFREY HD
WILLOUGHBY AFW
Citation: Na. Archer et al., GROWTH METHOD, COMPOSITION, AND DEFECT STRUCTURE DEPENDENCE OF MERCURY DIFFUSION IN CDXHG1-XTE, Journal of electronic materials, 22(8), 1993, pp. 967-971
Risultati:
1-7
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