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Results: 1-9 |
Results: 9

Authors: SPERR P KOGEL G WILLUTZKI P TRIFTSHAUSER W
Citation: P. Sperr et al., PULSING OF LOW-ENERGY POSITRON BEAMS, Applied surface science, 116, 1997, pp. 78-81

Authors: TRIFTSHAUSER W KOGEL G SPERR P BRITTON DT UHLMANN K WILLUTZKI P
Citation: W. Triftshauser et al., A SCANNING POSITRON MICROSCOPE FOR DEFECT ANALYSIS IN MATERIALS SCIENCE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 130(1-4), 1997, pp. 264-269

Authors: BRAUER G ANWAND W COLEMAN PG KNIGHTS AP PLAZAOLA F PACAUD Y SKORUPA W STORMER J WILLUTZKI P
Citation: G. Brauer et al., POSITRON STUDIES OF DEFECTS IN ION-IMPLANTED SIC, Physical review. B, Condensed matter, 54(5), 1996, pp. 3084-3092

Authors: HARTING M WILLUTZKI P
Citation: M. Harting et P. Willutzki, A NEW METHOD TO POSITION A SAMPLE ON A ROTATING AXIS ACCURATELY, Measurement science & technology, 6(3), 1995, pp. 276-280

Authors: WILLUTZKI P STORMER J BRITTON DT TRIFTSHAUSER W
Citation: P. Willutzki et al., INVESTIGATIONS OF POSITRON LIFETIMES IN INP WITH A PULSED POSITRON BEAM, Applied physics A: Materials science & processing, 61(3), 1995, pp. 321-324

Authors: STORMER J WILLUTZKI P BRITTON DT KOGEL G TRIFTSHAUSER W KIUNKE W WITTMANN F EISELE I
Citation: J. Stormer et al., A SLOW POSITRON LIFETIME STUDY OF THE ANNEALING BEHAVIOR OF AN AMORPHOUS-SILICON LAYER GROWN BY MBE, Applied physics A: Materials science & processing, 61(1), 1995, pp. 71-74

Authors: ZECCA A BRUSA RS DUARTENAIA MP KARWASZ GP PARIDAENS J PIAZZA A KOGEL G SPERR P BRITTON DT UHLMANN K WILLUTZKI P TRIFTSHAUSER W
Citation: A. Zecca et al., A PULSED POSITRON MICROBEAM, Europhysics letters, 29(8), 1995, pp. 617-622

Authors: WILLUTZKI P STORMER J KOGEL G SPERR P BRITTON DT STEINDL R TRIFTSHAUSER W
Citation: P. Willutzki et al., AN IMPROVED PULSED LOW-ENERGY POSITRON SYSTEM, Measurement science & technology, 5(5), 1994, pp. 548-554

Authors: BRITTON DT WILLUTZKI P TRIFTSHAUSER W HAMMERL E HANSCH W EISELE I
Citation: Dt. Britton et al., ON THE SENSITIVITY OF POSITRONS TO ELECTRIC-FIELDS AND DEFECTS IN MBE-GROWN SILICON STRUCTURES, Applied physics. A, Solids and surfaces, 58(4), 1994, pp. 389-393
Risultati: 1-9 |