Authors:
TRIFTSHAUSER W
KOGEL G
SPERR P
BRITTON DT
UHLMANN K
WILLUTZKI P
Citation: W. Triftshauser et al., A SCANNING POSITRON MICROSCOPE FOR DEFECT ANALYSIS IN MATERIALS SCIENCE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 130(1-4), 1997, pp. 264-269
Citation: M. Harting et P. Willutzki, A NEW METHOD TO POSITION A SAMPLE ON A ROTATING AXIS ACCURATELY, Measurement science & technology, 6(3), 1995, pp. 276-280
Authors:
WILLUTZKI P
STORMER J
BRITTON DT
TRIFTSHAUSER W
Citation: P. Willutzki et al., INVESTIGATIONS OF POSITRON LIFETIMES IN INP WITH A PULSED POSITRON BEAM, Applied physics A: Materials science & processing, 61(3), 1995, pp. 321-324
Authors:
STORMER J
WILLUTZKI P
BRITTON DT
KOGEL G
TRIFTSHAUSER W
KIUNKE W
WITTMANN F
EISELE I
Citation: J. Stormer et al., A SLOW POSITRON LIFETIME STUDY OF THE ANNEALING BEHAVIOR OF AN AMORPHOUS-SILICON LAYER GROWN BY MBE, Applied physics A: Materials science & processing, 61(1), 1995, pp. 71-74
Authors:
BRITTON DT
WILLUTZKI P
TRIFTSHAUSER W
HAMMERL E
HANSCH W
EISELE I
Citation: Dt. Britton et al., ON THE SENSITIVITY OF POSITRONS TO ELECTRIC-FIELDS AND DEFECTS IN MBE-GROWN SILICON STRUCTURES, Applied physics. A, Solids and surfaces, 58(4), 1994, pp. 389-393