Authors: KALINGAMUDALI SRD WISMAYER AC WOODS RC WIGHT DR

Citation: Srd. Kalingamudali et al., PERIMETER AND BULK RECOMBINATION CURRENTS IN GAAS HOMOJUNCTION DIODESAND GAAS ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS AFTER SURFACE PROCESSING/, Solid-state electronics, 41(3), 1997, pp. 417-422

Authors: GILBERD PW JOHNSON PB VICKRIDGE IC WISMAYER AC

Citation: Pw. Gilberd et al., TEM AND IBA STUDY OF THE THERMAL-OXIDATION OF V FOLLOWING HIGH-DOSE HE IMPLANTATION, Journal of nuclear materials, 244(1), 1997, pp. 51-58

Authors: KALINGAMUDALI SRD WISMAYER AC WOODS RC

Citation: Srd. Kalingamudali et al., EXPERIMENTAL EVALUATION OF SEPARATE CONTRIBUTIONS TO IDEALITY FACTOR FOR THE BASE SURFACE RECOMBINATION CURRENT IN HETEROJUNCTION BIPOLAR-TRANSISTORS, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 238-241

Authors: KALINGAMUDALI SRD WISMAYER AC WOODS RC

Citation: Srd. Kalingamudali et al., RECOMBINATION CURRENT REDUCTION IN ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH POLYIMIDE DEPOSITION/, Solid-state electronics, 37(12), 1994, pp. 1977-1982

Authors: KALINGAMUDALI SRD WISMAYER AC WOODS RC ROBERTS JS

Citation: Srd. Kalingamudali et al., CURRENT GAIN INCREASE IN ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS USING ALGAAS LAYER OVERGROWTH/, Applied physics letters, 65(11), 1994, pp. 1403-1405