Citation: M. Wittmer et al., NOVEL DIFFUSION PHENOMENON OF DOPANTS IN SILICON AT LOW-TEMPERATURES - REPLY, Physical review letters, 71(6), 1993, pp. 948-948
Authors:
ZHANG Y
OEHRLEIN GS
KROESEN GMW
WITTMER M
STEIN K
Citation: Y. Zhang et al., HIGH-RESOLUTION DEPTH PROFILING OF ULTRATHIN SILICON-OXIDE NITRIDE OXIDE LAYERS, Journal of the Electrochemical Society, 140(5), 1993, pp. 1439-1441