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Results:
1-7
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Results: 7
Authors:
ARAFA M
WOHLMUTH WA
FAY P
ADESIDA I
Citation: M. Arafa et al., EFFECT OF DIFFRACTION AND INTERFERENCE IN SUBMICRON METAL-SEMICONDUCTOR-METAL PHOTODETECTORS, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 62-67
Authors:
WOHLMUTH WA
FAY P
VACCARO K
MARTIN EA
ADESIDA I
Citation: Wa. Wohlmuth et al., HIGH-SPEED INGAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS WITH THIN ABSORPTION LAYERS, IEEE photonics technology letters, 9(5), 1997, pp. 654-656
Authors:
WOHLMUTH WA
SEO JW
FAY P
CANEAU C
ADESIDA I
Citation: Wa. Wohlmuth et al., A HIGH-SPEED ITO-INALAS-INGAAS SCHOTTKY-BARRIER PHOTODETECTOR, IEEE photonics technology letters, 9(10), 1997, pp. 1388-1390
Authors:
FAY P
ARAFA M
WOHLMUTH WA
CANEAU C
CHANDRASEKHAR S
ADESIDA I
Citation: P. Fay et al., DESIGN, FABRICATION, AND PERFORMANCE OF HIGH-SPEED MONOLITHICALLY INTEGRATED INALAS INGAAS/INP MSM/HEMT PHOTORECEIVERS/, Journal of lightwave technology, 15(10), 1997, pp. 1871-1879
Authors:
WOHLMUTH WA
FAY P
ADESIDA I
Citation: Wa. Wohlmuth et al., DARK CURRENT SUPPRESSION IN GAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS, IEEE photonics technology letters, 8(8), 1996, pp. 1061-1063
Authors:
WOHLMUTH WA
FAY P
CANEAU C
ADESIDA I
Citation: Wa. Wohlmuth et al., LOW DARK CURRENT, LONG-WAVELENGTH METAL-SEMICONDUCTOR-METAL PHOTODETECTORS, Electronics Letters, 32(3), 1996, pp. 249-250
Authors:
WOHLMUTH WA
ARAFA M
MAHAJAN A
FAY P
ADESIDA I
Citation: Wa. Wohlmuth et al., INGAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS WITH ENGINEERED SCHOTTKY-BARRIER HEIGHTS, Applied physics letters, 69(23), 1996, pp. 3578-3580
Risultati:
1-7
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