Citation: R. Wolf et al., Low-temperature ICPECVD of silicon nitride in SiH4-NH3-Ar discharges analyzed by spectroscopic ellipsometry and etch behavior in KOH and BHF, SURF COAT, 142, 2001, pp. 786-791
Authors:
Otto, T
Wolf, H
Streiter, R
Dehoff, A
Wandel, K
Gessner, T
Citation: T. Otto et al., Process and equipment simulation of dry silicon etching in the absence of ion bombardment, MICROEL ENG, 45(4), 1999, pp. 377-391