Authors: Metzger, WK Wanlass, MW Ellingson, RJ Ahrenkiel, RK Carapella, JJ

Citation: Wk. Metzger et al., Auger recombination in low-band-gap n-type InGaAs, APPL PHYS L, 79(20), 2001, pp. 3272-3274

Authors: Ahrenkiel, RK Johnston, SW Webb, JD Gedvilas, LM Carapella, JJ Wanlass, MW

Citation: Rk. Ahrenkiel et al., Recombination lifetimes in undoped, low-band gap InAsyP1-y/InxGa1-xAs double heterostructures grown on InP substrates, APPL PHYS L, 78(8), 2001, pp. 1092-1094

Authors: Webb, JD Keyes, BM Ahrenkiel, RK Wanlass, MW Ramanathan, K Gedvilas, LM Olson, MR Dippo, P Jones, KM

Citation: Jd. Webb et al., Fourier transform-luminescence spectroscopy of semiconductor thin films and devices, VIB SPECTR, 21(1-2), 1999, pp. 3-15

Authors: Ahrenkiel, SP Johnston, SW Ahrenkiel, RK Arent, DJ Hanna, MC Wanlass, MW

Citation: Sp. Ahrenkiel et al., Atomic ordering and temperature-dependent transient photoconductivity in Ga0.47In0.53As, APPL PHYS L, 74(23), 1999, pp. 3534-3536

Authors: Gfroerer, TH Cornell, EA Wanlass, MW

Citation: Th. Gfroerer et al., Efficient directional spontaneous emission from an InGaAs/InP heterostructure with an integral parabolic reflector, J APPL PHYS, 84(9), 1998, pp. 5360-5362