Authors:
Voldman, S
Hui, D
Warriner, L
Young, D
Howard, J
Assaderaghi, F
Shahidi, G
Citation: S. Voldman et al., Electrostatic discharge (ESD) protection in silicon-on-insulator (SOI) CMOS technology with aluminum and copper interconnects in advanced microprocessor semiconductor chips, J ELECTROST, 49(3-4), 2000, pp. 151-168