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Results:
1-7
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Results: 7
Authors:
Berhane, Y
Manasreh, MO
Weaver, BD
Citation: Y. Berhane et al., He+-ion irradiation effect on intersubband transitions in GaAs/AlGaAs multiple quantum wells, J APPL PHYS, 89(6), 2001, pp. 3517-3519
Authors:
Jackson, EM
Weaver, BD
Shojah-Ardalan, S
Wilkins, R
Seabaugh, AC
Brar, B
Citation: Em. Jackson et al., Irradiation effects in InGaAs/InAlAs high electron mobility transistors, APPL PHYS L, 79(14), 2001, pp. 2279-2281
Authors:
Magno, R
Weaver, BD
Bracker, AS
Bennett, BR
Citation: R. Magno et al., Proton irradiation of InAs/AlSb/GaSb resonant interband tunneling diodes, APPL PHYS L, 78(17), 2001, pp. 2581-2583
Authors:
Weaver, BD
Jackson, EM
Summers, GP
Seabaugh, AC
Citation: Bd. Weaver et al., Disorder effects in reduced dimension: Indium-phosphide-based resonant tunneling diodes, J APPL PHYS, 88(11), 2000, pp. 6951-6953
Authors:
Weaver, BD
Jackson, EM
Seabaugh, AC
van der Wagt, P
Citation: Bd. Weaver et al., MeV ion-induced suppression of resonance current in InP-based resonant tunneling diodes, APPL PHYS L, 76(18), 2000, pp. 2562-2564
Authors:
Messenger, SR
Burke, EA
Summers, GP
Xapsos, MA
Walters, RJ
Jackson, EM
Weaver, BD
Citation: Sr. Messenger et al., Nonionizing energy loss (NIEL) for heavy ions, IEEE NUCL S, 46(6), 1999, pp. 1595-1602
Authors:
Jackson, EM
Weaver, BD
Seabaugh, AC
Van der Wagt, JPA
Beam, EA
Citation: Em. Jackson et al., Proton-induced disorder in InP-based resonant tunneling diodes, APPL PHYS L, 75(2), 1999, pp. 280-282
Risultati:
1-7
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