Authors: Mochizuki, K Welty, RJ Asbeck, PM Lutz, CR Welser, RE Whitney, SJ Pan, NR

Citation: K. Mochizuki et al., GaInP/GaAs collector-up tunneling-collector heterojunction bipolar transistors (C-up TC-HBTs): Optimization of fabrication process and epitaxial layer structure for high-efficiency high-power amplifiers, IEEE DEVICE, 47(12), 2000, pp. 2277-2283