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Results: 2
Charge based modeling of the inner fringing capacitance of SOI-MOSFETs
Authors: Wiatr, M Seegebrecht, P Peters, H
Citation: M. Wiatr et al., Charge based modeling of the inner fringing capacitance of SOI-MOSFETs, SOL ST ELEC, 45(4), 2001, pp. 585-592
On the initial temporal current characteristics of thin oxide devices depending on constant voltage pulse sequences
Authors: Zahlmann-Nowitzki, JW Nebrich, L Wiatr, M Seegebrecht, P
Citation: Jw. Zahlmann-nowitzki et al., On the initial temporal current characteristics of thin oxide devices depending on constant voltage pulse sequences, MICROEL REL, 40(4-5), 2000, pp. 739-742
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