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Results: 1-6 |
Results: 6

Authors: Leier, H Vescan, A Dietrich, R Wieszt, A Sledzik, HH
Citation: H. Leier et al., RF characterisation and transient behaviour of AlGaN/GaN power HFETs, IEICE TR EL, E84C(10), 2001, pp. 1442-1447

Authors: Daumiller, I Theron, D Gaquiere, C Vescan, A Dietrich, R Wieszt, A Leier, H Vetury, R Mishra, UK Smorchkova, IP Keller, S Nguyen, NX Nguyen, C Kohn, E
Citation: I. Daumiller et al., Current instabilities in GaN-based devices, IEEE ELEC D, 22(2), 2001, pp. 62-64

Authors: Lee, JS Vescan, A Wieszt, A Dietrich, R Leier, H Kwon, YS
Citation: Js. Lee et al., Small signal and power measurements of AlGaN/GaN HEMT with SiN passivation, ELECTR LETT, 37(2), 2001, pp. 130-132

Authors: Vescan, A Dietrich, R Wieszt, A Schurr, A Leier, H Piner, EL Redwing, JM
Citation: A. Vescan et al., AlGaN/GaN MODFETs on semi-insulating SiC with 3W/mm at 20GHz, ELECTR LETT, 36(14), 2000, pp. 1234-1236

Authors: Dietrich, R Vescan, A Wieszt, A Leier, H Boutros, KS Redwing, JM Kornitzer, K Freitag, R Ebner, T Thonke, K
Citation: R. Dietrich et al., Effect of illumination on the electrical characteristics of AlGaN/GaN FETs, PHYS ST S-A, 176(1), 1999, pp. 209-212

Authors: Vescan, A Dietrich, R Wieszt, A Tobler, H Leier, H Van Hove, JM Chow, PP Wowchak, AM
Citation: A. Vescan et al., MBE grown AlGaN GaN MODFETs with high breakdown voltage, J CRYST GR, 202, 1999, pp. 327-331
Risultati: 1-6 |