AAAAAA

   
Results: 1-4 |
Results: 4

Authors: Bonar, JM Willoughby, AFW Dan, AH McGregor, BM Lerch, W Loeffelmacher, D Cooke, GA Dowsett, MG
Citation: Jm. Bonar et al., Antimony and boron diffusion in SiGe and Si under the influence of injected point defects, J MAT S-M E, 12(4-6), 2001, pp. 219-221

Authors: Uppal, S Willoughby, AFW Bonar, JM Evans, AGR Cowern, NEB Morris, R Dowsett, MG
Citation: S. Uppal et al., Diffusion of ion-implanted boron in germanium, J APPL PHYS, 90(8), 2001, pp. 4293-4295

Authors: Dilliway, GDM Willoughby, AFW Bonar, JM
Citation: Gdm. Dilliway et al., Characterization of morphology and defects in silicon-germanium virtual substrates, J MAT S-M E, 11(7), 2000, pp. 549-556

Authors: Paine, ADN Willoughby, AFW Bonar, JM
Citation: Adn. Paine et al., Point defect redistribution in Si1-xGex alloys, J MAT S-M E, 10(5-6), 1999, pp. 339-343
Risultati: 1-4 |