Authors:
Bonar, JM
Willoughby, AFW
Dan, AH
McGregor, BM
Lerch, W
Loeffelmacher, D
Cooke, GA
Dowsett, MG
Citation: Jm. Bonar et al., Antimony and boron diffusion in SiGe and Si under the influence of injected point defects, J MAT S-M E, 12(4-6), 2001, pp. 219-221
Citation: Gdm. Dilliway et al., Characterization of morphology and defects in silicon-germanium virtual substrates, J MAT S-M E, 11(7), 2000, pp. 549-556