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Results: 1-7 |
Results: 7
Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE
Authors: Johnson, JW Baca, AG Briggs, RD Shul, RJ Wendt, JR Monier, C Ren, F Pearton, SJ Dabiran, AM Wowchack, AM Polley, CJ Chow, PP
Citation: Jw. Johnson et al., Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE, SOL ST ELEC, 45(12), 2001, pp. 1979-1985
Electronic states in modulation doped p-AlGaN/GaN superlattices
Authors: Polyakov, AY Smirnov, NB Govorkov, AV Osinsky, AV Norris, PE Pearton, SJ Van Hove, J Wowchack, AM Chow, RR
Citation: Ay. Polyakov et al., Electronic states in modulation doped p-AlGaN/GaN superlattices, J APPL PHYS, 90(8), 2001, pp. 4032-4038
dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors
Authors: Luo, B Johnson, JW Ren, F Allums, KK Abernathy, CR Pearton, SJ Dwivedi, R Fogarty, TN Wilkins, R Dabiran, AM Wowchack, AM Polley, CJ Chow, PP Baca, AG
Citation: B. Luo et al., dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors, APPL PHYS L, 79(14), 2001, pp. 2196-2198
Common-base operation of GaN bipolar junction transistors
Authors: Cao, XA Dang, GT Zhang, AP Ren, F Abernathy, CR Pearton, SJ Van Hove, JM Klaassen, JJ Polley, CJ Wowchack, AM Chow, PP King, DJ Chu, SNG
Citation: Xa. Cao et al., Common-base operation of GaN bipolar junction transistors, EL SOLID ST, 3(7), 2000, pp. 333-334
High temperature characteristics of GaN-based Heterojunction Bipolar Transistors and Bipolar Junction Transistors
Authors: Cao, XA Van Hove, JM Klaassen, JJ Polley, CJ Wowchack, AM Chow, PP King, DJ Ren, F Dang, G Zhang, AP Abernathy, CR Pearton, SJ
Citation: Xa. Cao et al., High temperature characteristics of GaN-based Heterojunction Bipolar Transistors and Bipolar Junction Transistors, SOL ST ELEC, 44(4), 2000, pp. 649-654
npn AlGaN/GaN heterojunction bipolar transistors and GaN bipolar junction transistors with regrown C-doped GaAs in the base regions
Authors: Dang, G Luo, B Zhang, AP Cao, XA Ren, F Pearton, SJ Cho, H Hobson, WS Lopata, J van Hove, JM Klaassen, JJ Polley, CJ Wowchack, AM Chow, PP King, DJ
Citation: G. Dang et al., npn AlGaN/GaN heterojunction bipolar transistors and GaN bipolar junction transistors with regrown C-doped GaAs in the base regions, SOL ST ELEC, 44(12), 2000, pp. 2097-2100
Uniformity and high temperature performance of X-band nitride power hemts fabricated from 2-inch epitaxy
Authors: Hickman, R Van Hove, JM Chow, PP Klaassen, JJ Wowchack, AM Polley, CJ
Citation: R. Hickman et al., Uniformity and high temperature performance of X-band nitride power hemts fabricated from 2-inch epitaxy, SOL ST ELEC, 42(12), 1998, pp. 2183-2185
Risultati: 1-7 |