Authors:
LIU X
ZHOU WB
YE TC
GE JA
CAI XY
CHENG AH
LIN YL
LIANG L
TANG HY
CHEN ZX
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Citation: K. Ozasa et al., DEPOSITION OF GALLIUM OXIDE AND INDIUM OXIDE ON GAAS FOR IN-SITU PROCESS USE BY ALTERNATING SUPPLY OF TEGA, TMIN, AND H2O2 AS SURGE PULSES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(1), 1994, pp. 120-124
Citation: K. Ozasa et al., DEPOSITION OF THIN INDIUM OXIDE FILM AND ITS APPLICATION TO SELECTIVEEPITAXY FOR IN-SITU PROCESSING, Thin solid films, 246(1-2), 1994, pp. 58-64
Citation: K. Ozasa et al., COMPOSITION CHANGE OF INDIUM OXIDE FILM BY TRIETHYLGALLIUM IRRADIATION PREPARED FOR IN-SITU SELECTIVE EPITAXY USE, JPN J A P 1, 32(10), 1993, pp. 4732-4736
Citation: K. Ozasa et al., SELECTIVE EPITAXY OF GAAS ON INDIUM OXIDE MASK FOLLOWED BY IN-SITU REMOVAL OF THE MASK, Applied physics letters, 63(12), 1993, pp. 1634-1636