DEPOSITION OF GALLIUM OXIDE AND INDIUM OXIDE ON GAAS FOR IN-SITU PROCESS USE BY ALTERNATING SUPPLY OF TEGA, TMIN, AND H2O2 AS SURGE PULSES

Deposition of gallium oxide and indium oxide on GaAs (001) was investi gated by the alternating supply of triethylgallium (TEGa) or trimethyl indium (TMIn), and hydrogen peroxide (H2O2). A pressure-control method was newly developed to produce precisely controlled surge pulses of s ource gases. Strong temperature dependence of the growth rate per sour ce cycle obtained for the oxide deposition was caused by the decomposi tion of metalorganics, and by the thermal desorption of the oxide duri ng the deposition. A critical thickness of 20 nm for the thermal desor ption of gallium oxide was observed, which gives the upper limit of th e promotive effect of underlying GaAs oh thermal desorption of gallium oxide. With implications for in situ process use, deposition of GaAs on gallium oxides and on indium oxides was performed by chemical beam epitaxy, and the differences between the two oxides were discussed fro m the viewpoint of gallium-atom-induced desorption and selectivity for GaAs deposition.