Authors: YOON IT OH SJ PARK HL

Citation: It. Yoon et al., AMPHOTERIC BEHAVIOR OF SN IN IN0.5GA0.5P LAYERS GROWN BY LIQUID-PHASEEPITAXY, Journal of applied physics, 83(4), 1998, pp. 2014-2018

Authors: YOON IT OH SJ PARK HL

Citation: It. Yoon et al., TRANSPORT PROPERTY OF IN0.5GA0.5P LAYERS GROWN BY LIQUID-PHASE EPITAXY, Journal of applied physics, 83(3), 1998, pp. 1527-1530

Authors: YOON IT JI TS PARK HL

Citation: It. Yoon et al., OBSERVATION OF THE BURSTEIN-MOSS SHIFT IN HEAVILY TE-DOPED IN0.5GA0.5P LAYERS GROWN BY LIQUID-PHASE EPITAXY, Thin solid films, 302(1-2), 1997, pp. 270-274

Authors: YOON IT JEONG BS PARK HL

Citation: It. Yoon et al., ZN DIFFUSION OF IN0.5GA0.5P INVESTIGATED BY PHOTOLUMINESCENCE MEASUREMENTS, Thin solid films, 300(1-2), 1997, pp. 284-288

Authors: YOON IT JI TS PARK HL

Citation: It. Yoon et al., STUDIES ON ZN-DOPED IN0.5GA0.5P LAYERS GROWN BY LIQUID-PHASE EPITAXY, Solid state communications, 103(1), 1997, pp. 49-54

Authors: YOON IT JI TS OH SJ CHOI JC PARK HL

Citation: It. Yoon et al., CONCENTRATION-DEPENDENT PHOTOLUMINESCENCE OF TE-DOPED IN0.5GA0.5P LAYERS GROWN BY LIQUID-PHASE EPITAXY, Journal of applied physics, 82(8), 1997, pp. 4024-4027